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K2717 from TOS, TOSHIBA 1pcs , TO247,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
Partno Mfg Dc Qty Available
K2717 TOS N/a 1
K2717 from TOSHIBA, TOSHIBA 1500pcs , TO-220F,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
K2717 10pcs , TO-220,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

APPLICATIONS '— Unit 1n mm_1010.3 ' (#32102 2,7ur0.20 Low Drain-Source ON Resistance : RDS(QN)=2.3Q (Typ.)0 High Forward Transfer Admittance : |st|=4.4S(Typ.)0 Low Leakage Current : IDSS=100PA(Max.) (VDS=720V)o Enhancement-Mode : Vth=2.0--4.0V(VDS=10V, ID=1mA)MAXIMUM RATINGS (Ta = 25°C)CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 900lVDrain- Gate Voltage (RG3: 20kn) VDGR -,'l-e),i,1-r,Gate- Source Voltage VG_SS. eat'1Drain Current1 . GATEi." 253;; 3EA .IA0751045 1i(.05‘25 f5102NJ EDEC -SAR 595Teh TOSHIBA 2-10RIBWeight: 1.9g(Typ.)EIAJ SC-67CHARACTERISTIC SYMBOL UNITThermal Resistance, Channel to Case Rth (ch-c)Thermal Resistance, Channel to Ambient Rth (ch-a)Note ;* Repetitive rating ; Pulse Width Limited by Max. junction temperature.** VDD=90V, Starting Tch=25°C, L=43.6mH, RG=25Q, IAR=5AThis transistor is an electrostatic sensitive device.Please handle with caution.O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general canmalfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizingTOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause lossof human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specifiedoperating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in theTOSHIBA Semiconductor Reliability Handbook.. The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBACORPORATION for any infringements of intellectual property or other rights C) the third parties which may result from its use. No license is grantedby implication or otherwise under any intellectual .. .2SK27172SK2717TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (n-MOSIII)HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONSDC-DC CONVERTER AND MOTOR DRIVE
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