JDP4P02AT ,Radio-frequency switching diodeElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitRevers ..
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JDP4P02AT
Radio-frequency switching diode
JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type
JDP4P02AT UHF~VHF Band RF Switch Applications Suitable for reducing set’s size as a result from enabling high-density
mounting due to 4-pin small packages. Low series resistance: rs = 1.0 Ω (typ.) Low capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.0015 g(typ.)
1 2 4
