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J109NationalSemiN/a5000avaiN-Channel JFET Switch
J110NSN/a2130avaiN-Channel Switch


J109 ,N-Channel JFET SwitchJ108 / J109 / J110Discrete POWER & SignalTechnologiesNJ108J109J110G TO-92SDN-Channel SwitchThis dev ..
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J109-J110
N-Channel Switch
Discrete POWER & Signal
Technologies
J108
J109
J110
N-Channel Switch

This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.SD
TO-92
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J108 / J109 / J110
Total Device Dissipation
Derate above 25°C
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
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