| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ISPLSI1032E125LJ |
LAT |
N/a |
2596 |
 |
In-System Programmable High Density PLD |
ISPLSI1032E125LJ , In-System Programmable High Density PLD
ISPLSI1032E-125LJ , In-System Programmable High Density PLD
ISPLSI1032E-125LJ , In-System Programmable High Density PLD
ISPLSI1032E125LT , In-System Programmable High Density PLD
ISPLSI1032E-125LT , In-System Programmable High Density PLD
K3296 ,MOS FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
K3351K ,TECHNIK - HIGH RELIABILITY FOR LOW COST
K3610 , Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
