| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ISPLSI1032E-90LTN |
LATTICE |
N/a |
6250 |
 |
In-System Programmable High Density PLD |
ISPLSI1032EA-100LT100 LATTICE, In-System Programmable High Density PLD
ISPLSI1032EA-100LT100 LALTCE, In-System Programmable High Density PLD
ISPLSI1032EA-125LT100 LATTICE, In-System Programmable High Density PLD
ISPLSI1048-50LQ
ISPLSI1048-70LQ
ISPLSI1048-70LQ LATTICE
ISPLSI1048-80LQ
ISPLSI1048-80LQ LATTICE
ISPLSI1048C50LQ LATTICE
ISPLSI1048C-50LQI Lattice
ISPLSI1048C-70LQ LATTICE
ISPLSI1048C-70LQ
ispLSI1048C-70LQN Lattice
ISPLSI1048E LATTICE, In-System Programmable High Density PLD
ISPLSI1048E-100LQ Lattice, In-System Programmable High Density PLD
ISPLSI-1048E-100LQN LATTICE, In-System Programmable High Density PLD
ISPLSI1032E-90LTN , In-System Programmable High Density PLD
ISPLSI1048E-100LQN , In-System Programmable High Density PLD
ISPLSI1048E100LT , In-System Programmable High Density PLD
ISPLSI1048E-100LTN , In-System Programmable High Density PLD
ISPLSI1048E-50LT , In-System Programmable High Density PLD
K3296 ,MOS FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
K3351K ,TECHNIK - HIGH RELIABILITY FOR LOW COST
K3610 , Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
