| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IS93C66A-3PI |
ISSI |
N/a |
93 |
 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM |
IS93C66G ISSI
IS93C66-G3 SEIKO
IS93C66P ISSI
IS93C76-3P ISSI
IS93C76A-2GRLI ISSI, 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2ZLI ISSI, 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2ZU ISSI
IS93C66A-3PI , 2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRI , 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISC-1210 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSInductance Range: .01µH to 100µH.TEST SELF- RATEDInductance Tolerance: ± ..
JAN1N4148-1 , Glass Axial Switching Diode
JAN1N753A , SILICON 400 mW ZENER DIODES
JAN2N1479 , NPN SILICON MEDIUM POWER TRANSISTOR
