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IRS2308-IRS2308STRPBF
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead package
DS No.PD60266 Rev A
International
IEZR Rectifier IRS2308(S)PbF
HALF-BRIDGE DRIVER
Features Packages
0 Floating channel designed for bootstrap operation
q Fully operational to +600 V
o Tolerant to negative transient voltage, dV/dt ftiiiiti,,s
immune \
0 Gate drive supply range from 10 V to 20 V 'eifir'
0 Undervoltage lockout for both channels
0 3.3 V, 5 V, and 15 V input logic compatible 8-Lead SOIC 8-Lead PDIP
o Cross-conduction prevention logic IRS2308S IRS2308
o Matched propagation delay for both channels
o Outputs in phase with inputs
q Logic and power ground +/- 5 V offset.
0 Internal 540 ns deadtime F eature Comparison
0 Lower di/dt gate driver for better C
. . . ross-
nOISe immunity P Input conduction Deadtime ' Ton/Toft
art Io . ' Ground Pins
. . gic prevention (ns) (ns)
Description mic
. 2106 COM
The [R.s.2308/lR.S23084 are high volt- 21064 HIN/LIN no none N/ss/COM 220/200
age, high speed power MOSFET and 2108 WWW yes Internal540 COM 220/200
IGBT drivers with dependent high and 21084 Programmable 540-5000 Vss/COM
. 2109 - Internal 540 COM
low side referenced output channels. 21094 IN/SD yes Programmable540-5000 Vss/COM 750/200
Proprietary Hyl.C and latch Imm-une 2304 HlN/LIN yes Internal100 COM 160/140
CMOS technologies enable ruggedized 2308 HIN/LIN yes Internal540 COM 220/200
monolithic construction. The logic input
is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Typical Connection
up to 600 V
(Referto Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to ourApplication Notes and DesignTips for propercircuit board layout.
International
IEER Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
IRS2308(S)PbF
Symbol Definition Min. Max. Units
VB High side floating absolute voltage -0.3 625
Vs High side floating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3 V
Vcc tow side and logic Fixed supply voltage -0.3 25
VLo tow side output voltage -O.3 Vcc + 0.3
VIN Logic input voltage (HIN & LIN ) vss - 0.3 Vcc + 0.3
st/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA f +25 °C (8 lead PDIP) - 1.0 W
(8 lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 lead PDIP) - 125 °CNV
(8 lead SOIC) - 200
TJ Junction temperature - 150
Ts Storage temperature -50 150 °C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The Vs and l/ss offset rating are tested with all supplies biased at a 15 V differential.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage VS + 10 Vs + 20
Vs High side floating supply offset voltage Note 1 600
VH0 High side floating output voltage Vs VB V
Vcc tow side and logic fixed supply voltage 10 20
VLo Low side output voltage 0 Vcc
VIN Logic input voltage COM Vcc
TA Ambient temperature -40 125 ''C
Note 1: Logic operational for Vs of -5 V to +600 V. Logic state held for Vs of -5 V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
