IRLZ44S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRLZ44ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ44ZSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRLZ44ZPbFIRLZ44ZSPbF IRLZ44ZLPbFAbsolute Maximum RatingsParameter Max. UnitsContinuou ..
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IRLZ44S
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
0 Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
o Logic-Level Gate Drive
0 RDs(on) Specified at 1/Gs---41/ & 5V
o 175°C Operating Temperature
0 Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
rtiet,tritiip,tytig
1:212 Rectifier
HEXFET® Power MOSFET
PD-9.906
IRLZ44S
D Gss = 60V
RDS(OH) ..= 0.0289
s ID = 50*A
on-resistance and cost-effectiveness.
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max. Units
10 © Tc = 25°C Continuous Drain Current, l/ss @ 5.0 V 50* '
ID @ Tc = 100°C Continuous Drain Current, Vss © 5.0 V 36 A
IDM iulsed Drain Current oo 200
PD @ Tc = 25°C I Power Dissipation 150 w
PD @ T_A=£5°C ___Power Dissipiion (PCB Mount)" - - 3.7
Enear Derating Factor 1.0 WPC
Linear Derating Factor (PCB Mount)" 0.025
VGs ' Gate-to-Source Voltage - :10 V
EAS Single Pulse Avalanche Energy © 400 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +175 =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
r._._1_V m --
__ Parameter Min 1 Typ i Max. Units
Rm - - slynction-to-esie - - 1.0 4
Hm I Junction-to-Ambient (PCB mount)" - - 4O °C/W
Rm ] Junction-to-Ambient - L - 62 4
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1RLZ44S BOR
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter - Min. Typ. My. 1 Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 . - - V VGs=OV, lo: 250pA
AV(BR)DSS/ATJ Breakdown Vortage Temp. Coefficient -r, 0.070 - V/°C_ Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance L- I 33:: n , x::::gx 5:23;: [4,l,
VGsah) Gate Threshold Voltage 1.0 - I 2.0 V Vrs=Vss, lo: 25OWA
ggs Forward Transconductance 23 - - S VDs=25V, lo=31A ©
loss Drain-to-Source Leakage Current - - 25 “A Vos=60V, VGs--0V
- - 250 Vos=48V, Vss=OV, TJ=150°C
lsss Gate-to-Source Forward Leakage - _ IOC, n A V¢s=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-1OV
ch Total Gate Charge L., ) - 66 lo=51A
Qgs Gate-to-Source Charge - - 12 nC Vos=48V i
di ' Gate-to-Drain ("Miller") Charge ,' - - 43 l VGs=5.OV See Fig. 6 and 13 CI,
tdion) _ Turn-On Delay Time : - 17_ . ---L lVoo=30V -
t, Rise Time _ - i30 ---j'' ns i lo=51A
tum") Turn-Of! Delay Time - . 42 - , Re=4.6Q
n Fall Time - 110 LT RD=0.56§2 See Figure 10 ©
LD I Internal Drain Inductance - 4.5 - I' , 3:11:63 'tie. i rr3,
_ l ---1 nH from package si)]--),';,)
Ls Internal Source Inductance I - 7.5 - Ind center of :11
" __L die contact s
Ciss Input Capacitance - - 3300 - VGs=OV
Coss Output Capacitance. _ - - - 1200 - pF VDs=25V
Crss Reverse Transfer Capacitance f - 1 200 I1 - f f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
3 Parameter Min. i Typ. Max. Units 1 TestConditio1s " I
5 Is Continuous Source Current - l - 50" ' l MOSFET symbol D "
'r, (Body Diode) - - _ A t showing the :-i) 1
3 ISM Pulsed Source Current - , - 200 i integral reverse G tr, i
(Body Diode) (D ' Iz p-n junction qude. ___§3__i
Vso Diode Forward Voltage _ - L - [ _- 2.5 V iTJ=2500, Is=51A, VGs=0V a) 5
fr _ 1 Reverse Recovery Time i, - 130 180 g ns JTJ=2500, IF=51A 1
On 1 Reverse Recovery Charge - _ 0.84 1.3 I wc E di/dt=100A/ps IO }
_ ton j Forlrard Tum-On Time ’ Intrinsithurn-on time is neglegible (turn-on domipated by Ls+Lo_)J
Notes:
sf) Repetitive rating; pulse width limited by J) Isos51A, di/dts250A/ys, 1/rorosV(Bn)Dss,
max. junction temperature (See Figure 11) TJS175°C
2) VDD=25V, starting TJ:25:'C. L=179pH ii) Pulse width S 300 ps; duty cycle 32%.
RG=25f2, lAs=51A (See Figure 12)
. Current limited by the package, (Die Current =51A)
