IRLZ44NSTRRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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IRLZ44NSTRLPBF-IRLZ44NSTRRPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRLZ44NS)
Low-profile through-hole (IRLZ44NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
0 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
PD - 95156
|RLZ44NS/LPbF
HEXFET© Power MOSFET
D I/ross = 55V
A RDS(on) = 0.022Q
ID = 47A
resistance in any existing surface mount package. The D2Pak TO-262
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ44N L) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 47
ID @ To = 100°C Continuous Drain Current, Vss @ 10V© 33 A
IDM Pulsed Drain Current ODS 160
PD @TA = 25°C Power Dissipation 3 8 W
Pro @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
Vss Gate-to-Source Voltage tl6 V
EAS Single Pulse Avalanche Energy©© 210 ml
IAR Avalanche Current0) 25 A
EAR Repetitive Avalanche EnergyCD 11 m]
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .4 o
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 CA/V
4/21/04
I R LZ44 N S/LPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)D53 Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV
- - 0.022 Vss = 10V, ID = 25A ©
RDSW Static Drain-to-Source On-Resistance - - 0.025 g VGS = 5.0V, '0 = 25A ©
- - 0.035 VGS = 4.0V, ID = 21A (9
Vesah) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGs, ID = 250pA
gfs Forward Transconductance 21 - - S Vos = 25V, ID = 25AS
. - - 25 Vos = 55V, l/ss = 0V
loss Drain-to-Source Leakage Current _ - 250 PA Vos = 44V, Vss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 16V
Gate-to-Source Reverse Leakage - - -100 Veg = -16V
(A; Total Gate Charge - - 48 ID = 25A
Qgs Gate-to-Source Charge - - 8.6 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 25 VGS = 5.0V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 11 - Voc, = 28V
tr Rise Time - 84 - ns ID = 25A
tam) Turn-Off Delay Time - 26 - Rs = 3.49, VGS = 5.0V
tf FallTime 15 RD =1.1S2,See Fig. 10 C9C0
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1700 - Vss = 0V
Coss Output Capacitance - 400 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 47 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 160 integral reverse G
(Body Diode) (D p-n junction diode. s
V5.3 Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 25A, VGs = 0V ©
trr Reverse Recovery Time - 80 120 ns TI, = 25°C, IF = 25A
Qrr Reverse Recovery Charge - 210 320 nC di/dt = 100A/ps COS
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L3+LD)
Notes:
(D Repetitive rating; pulse width limited by © ISD S 25A, di/dt S 27OA/ps, VDD S V(BR)DSS:
max. junction temperature. ( See fig. 11 ) Tus 175°C
© VDD = 25V, starting To = 25''C, L =470PH © Pulse width S 300ps; duty cycle S 2%.
Rs = 259, IAS= 25A. (See Figure 12)
s Uses IRLZ44N data and test Conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
