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IRLS3034
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD -97364A
IRLS3034PbF
IFILSL3034PbF
International
Tait Rectifier
HEXFETID Power MOSFET
Applications
. lc Meer. Drive . . . . D Voss 40V
: 'Cingi2E,fttl"g Synchronous Rectification m SMPS RDS(on) typ. 1.4mf2
ptible Power Supply
q High Speed Power Switching G max. 1.7mf2
. Hard Switched and High Frequency Circuits In (Silicon Limited) 343ACO
lr, (Package Limited) 195A
Benefits
. Optimized for Logic Level Drive
. Very Low RDS(ON) at 4.5V VGS
. Superior R*Q at 4.5V VGS
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness 's
. Fully Characterized Capacitance and Avalanche ‘GD
SOA D2Pak TO-S
0 Enhanced body diode dV/dt and dI/dt Capability IRLS3034PbF IRLSL3034PbF
o Lead-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 343C)
b @ To = 100°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 243 (D A
lr, @ To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 195
bs, Pulsed Drain Current © 1372
PD @Tc = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
Vss Gate-to-Source Voltage :20 V
dv/dt Peak Diode Recovery GD 4.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10|bf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 6) 255 mJ
|AR Avalanche Current Q) . A
EAR Repetitive Avalanche Energy © See Fig. 14, 15, 22a, 22b, mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case @(0 - 0.4 o C /W
ReJA Junction-to-Ambient (PCB Mount) - 40
1
07/02/09
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IRLS/SL3034PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units) Conditions
V(Bmss Drain-to-Source Breakdown Voltage 40 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.04 - V/°C Reference to 25°C, ID = 5mA©
RDSM Static Drain-to-Source On-Resistance - 1.4 I.7 mo I/ss = lov, ID = 195A (O
- 1.6 2.0 I/ss = 4.5V, ID = 172A ©
Vega“) Gate Threshold Voltage 1.0 - 2.5 V Vos = I/as, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 VDS = 40V, l/ss = 0V
- - 250 PA vDS = 40V, Vss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -20V
Rem) Internal Gate Resistance -- 2.1 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Unit Conditions
gfs Forward Transconductance 286 - - S Vos = 10V, ID = 195A
Qg Total Gate Charge - 108 162 ID = 185A
Qgs Gate-to-Source Charge - 29 - VDS = 20V
di Gate-to-Drain ("Miller") Charge - 54 - nC I/ss = 4.5V s
stnc Total Gate Charge Sync. (Qg - di) - 54 - ID = 185A, VDs =0V, I/ss = 4.5V
1mm) Turn-On Delay Time - 65 - VDD = 26V
t, Rise Time - 827 - ID = 195A
tom Turn-Off Delay Time - 97 - ns Rs = 2.19
t, Fall Time - 355 - Vas = 4.5V ©
Ciss Input Capacitance - 10315 - I/ss = 0V
Cass Output Capacitance - 1980 - Vos = 25V
Crss Reverse Transfer Capacitance - 935 - pF f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 2378 - I/ss = OV, VDS = 0V to 32V C)
Coss eff. (TR) Effective Output Capacitance (Time Related) © - 2986 - Vss = OV, Vos = OV to 32V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3430) MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - A integral reverse G
. 1372 . . .
(Body Diode) © p-n Junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 195A, Vss = 0V Cs)
t,, Reverse Recovery Time - 39 - T J = 25°C VR = 34V,
- 41 - ns TJ = 125°C ' =195A
Qrr Reverse Recovery Charge - 39 - T, = 25°C di/dt = 100A/ps ©
- 46 - nC Tu = 125°C
IRRM Reverse Recovery Current - 1.7 - A TJ = 25°C
ion Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(D Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.013mH
Rs = 259, IAS = 195A, VGs =1OV. Part not recommended for use
above this value .
(d) Iso S 195A, di/dt S MIA/ps, VDD S V(snvss, Tu S 175°C.
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© Pulse width I 400ps; duty cycle 3 2%.
co cus eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDs is rising from O to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
© R9 is measured at Tu approximately 90''C
C) Rouc value shown is at time zero
