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IRLR9343TRPBFIRN/a10000avai-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
IRLR9343TRRPBFIRN/a26200avai-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package


IRLR9343TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage -55 VDSVGate-to-S ..
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IRLR9343TRPBF-IRLR9343TRRPBF
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International DIGITAL AUDIO MOSFET
ISBR Rectifier
Features
q Advanced Process Technology
q Key Parameters Optimized for Class-D Audio
Amplifier Applications
. Low RDSON for Improved Efficiency
. Low ck; and Qsw for Better THD and Improved
Efficiency
. Low Qrr for Better THD and Lower EMI
. 175°C Operating Junction Temperature for
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability
. Multiple Package Options
. Lead-Free
Description
PD - 95386A
IRLR9343PbF
|RLU9343PbF
IRLU9343-701PbF
Key Parameters
V03 -55 v
RDS(ON) typ. @ I/ss = -10V 93 m9
RDS(ON) typ. @ I/ss = -4.5V 150 m9
q, typ. 31 nC
T: max 175 °C
D tii)) (iiit
Ri', L R)e')
D-Pak l-Pak
G IRLR9343 IRLU9343
I-Pak Leadform 701
S IRLU9343-701
Refer to page 10 for package outline
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -55 V
VGS Gate-to-Source Voltage :20
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -20 A
ID @ To = 100°C Continuous Drain Current, VGS @ 10V -14
G, Pulsed Drain Current CO -60
Po @Tc = 25°C Power Dissipation 79 W
PD @Tc = 100°C Power Dissipation 39
Linear Derating Factor 0.53 W/°C
TJ Operating Junction and -40 to + 175 ''C
Tsm Storage Temperature Range
Clamping Pressure © - N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case S - 1.9
ReJA Junction-to-Ambient (PCB Mounted) S© - 50 'CIW
RBJA Junction-to-Ambient (free air) (S) - 110
Notes (D through (9 are on page 10
1
12/07/04
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IRLR/U9343PbF & IRLU9343-701PbF International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - -52 - mV/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 93 105 m9 N/ss = -10V, ID = -3.4A ©
- 150 170 l/ss = -4.5v, ID = -2.7A Cl)
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = I/ss, ID = -250pA
AVGSWIATJ Gate Threshold Voltage Coefficient - -3.7 - mV/°C
IDSS Drain-to-Source Leakage Current - - -2.0 pA Vos = -55V, VGS = 0V
- - -25 Vos = -55v, I/cs = 0v, T., = 125°C
IGSS Gate-to-Source Forward Leakage - - -100 nA l/ss = -20V
Gate-to-Source Reverse Leakage - - 100 N/ss = 20V
git Forward Transconductance 5.3 - - S Vos = -25V, ID = -14A
Qg Total Gate Charge - 31 47 Vros = -44V
Qgs Gate-to-Source Charge - 7.1 - l/ss = -10V
di Gate-to-Drain Charge - 8.5 - ID = -14A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
tnon) Turn-On Delay Time - 9.5 - VDD = -28V, Ves = -10V Cl)
t, Rise Time - 24 - ID = -14A
taon Turn-Off Delay Time - 21 - ns RG = 2.59
t, Fall Time - 9.5 -
Ciss Input Capacitance - 660 - l/ss = 0V
Coss Output Capacitance - 160 - pF Vos = -50V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 280 - l/ss = 0V, Vos = 0V to -44V
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package
and center of die contact GD
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 120 mJ
IAR Avalanche Current CD See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy C) m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - -20 MOSFET symbol D
(Body Diode) A showing the H"
ISM Pulsed Source Current - - -60 integral reverse G m“
(Body Diode) C) p-n junction diode. s
Va, Diode Forward Voltage - - -1.2 v Tu = 25°C, ls = -14A, l/GS = 0v (3
trr Reverse Recovery Time - 57 86 ns Tu = 25°C, IF = -14A
Q,, Reverse Recovery Charge - 120 180 nC di/dt = 100A/ps Cl)
2
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