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IRLR8103VTRLPBF-IRLR8103VTRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
. N-Channel Application-Specific MOSFETs
. Ideal for CPU Core DC-DC Converters
. Low Conduction Losses
PD - 95093A
IRLR8103VPbF
. Low Switching Losses
. Minimizes Parallel MOSFETs for high current D
applications
. 100% Re Tested
. Lead-Free A
Description G
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance D-Pak S
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
. . DEVICE CHARACTERlSTlCSS
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including IRLR8103V
Rmon , gate charge and Cdv/dt-induced turn-on immunity. 7 9 m Q
The IhLR8103V offers an extremely low combination of RDS(0n) .
st & Ros on for reduced losses in both control and % 27 nC
synchronous FET applications. Q 12 nC
The package is designed for vapor phase, infra-red, Qoss 29nC
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Parameter Symbol IRLR8103V Units
Drain-Source Voltage Vos 30 V
Gate-Source Voltage V63 t20
Continuous Drain or Source Current TC = 25°C I 91
(Vss > 10V) TC= 90°C D 63 A
Pulsed Drain Current (D IBM 363
TC = 25°C
Power Dissipation © PD 115 W
TC = 90°C 60
Junction & Storage Temperature Range Tu , Ts-rG -55 to 150 °C
Continuous Source Current (Body Diode) Is 91 A
Pulsed Source Current (D Iss, 363
Thermal Resistance
Parameter Symbol Typ. Max. Units
Maximum Junction-to-Ambient ©© ROJA - 50 °C/W
Maximum Junction-to-Case © Rox; - 1.09
1
12/0604
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IRLR8103VPbF International
TDR Rectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-to-Source Breakdown Voltage BVDSS 30 - - V Ves = ov, ID = 250pA
Static Drain-Source RDS(on) - 6.9 9.0 m9 Vss = 10V, ID = 15A ©
On-Resistance - 7.9 10.5 Vss = 4.5V, lo =15A ©
Gate Threshold Voltage VGS(1h) 1.0 - 3.0 V Vos = Ves, ID = 250uA
Drain-to-Source Leakage Current loss - - 50 pA Vos = 30V, Vss = 0V
- - 20 Vos = 24V, I/ss = 0
_ - 100 pA Vos = 24V, I/ss = 0, TJ = 100°C
Gate-Source Leakage Current less - - 1100 nA Vss = 1 20V
Total Gate Charge, Control FET QG - 27 - Vss = SV, ID = 15A, VDs = 16V
Total Gate Charge, Synch FET % - 23 - Vss = 5V, Vos < 100mV
Pre-Vth Gate-Source Charge QGs1 - 4.7 -
Post-Vth Gate-Source Charge Qesg - 2.0 - nC Vos = 16V, ID = 15A
Gate to Drain Charge QGD - 9.7 -
Switch Charge (0952 + di) st - 12 -
Output Charge Qoss - 29 - Vos = 16V, I/ss = 0
Gate Resistance Re 0.8 - 3.1 Q
Turn-On Delay Time tam) - 10 - VDD = 16V
Rise Time t, - 9 - ns ID = 15A
Turn-Off Delay Time tam) - 24 - Vss = 5.0V
Fall Time it - 18 - Clamped Inductive Load
Input Capacitance Ciss - 2672 -
Output Capacitance Coss - 1064 - pF Vss = 16V, Vss--0
Reverse Transfer Capacitance Crss - 109 -
Source-Drain Rating & Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage Vso - 0.9 1.3 V IS = 15AO, VGs = 0V
Reverse Recovery Charge (ii) er _ 103 - nC di/dt N 700A/ps
Vos =16V,Vss = 0V, V =15A
Reverse Recovery Charge OMS) - 96 - nC di/dt = 700A/ps , (with 1OBQO40)
(with Parallel Schottky) © Vos-- 16V, Vss = 0V, h: = 15A
Notes:
(D Repetitive rating; pulse width limited by max. junction temperature.
2) Pulse width f 400 ps; duty cycle S 2%.
<3) When mounted on 1 inch square copper board, t < 10 sec.
Cl) Typ = measured - 0055
Cs) Typical values of Ros(on) measured at Vas = 4.5V, A, st and QOSS measured at Vas = 5.0V, l, = 15A.
2
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