IRLU7843 ,30V Single N-Channel HEXFET Power MOSFET in a I-Pak package IRLR7843IRLU7843HEXFET Power MOSFET
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IRLR7843-IRLU7843
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
PD - 94638A
IRLR7843
IRLU7843
HEXFET® Power MOSFET
Applications V R
o High Frequency Synchronous Buck DSS DS(on) max Ctg
Converters for Computer Processor Power 30V 3.3mQ 34nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits iii)
o Very Low RDS(on) at 4.5V VGS ,
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRLR7843 IRLU7843
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage * 20
ID @ Tc = 25°C Continuous Drain Current, N/ss © 10V 161 ©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 113© A
IDM Pulsed Drain Current © 620
Pro @Tc = 25°C Maximum Power Dissipation © 140 W
Pro @Tc = 100°C Maximum Power Dissipation © 71
Linear Derating Factor 0.95 W/''C
T J Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 1.05
ROJA Junction-to-Ambient (PCB Mount) © _ 50 "CIW
ROJA Junction-to-Ambient - 1 10
Notes OD through S are on page 11
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IRLR/U7843 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 19 - mV/“C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.6 3.3 mf2 VGS = 10V, ID = 15A ©
- 3.2 4.0 VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.5 - 2.3 V Ws = N/ss, ID = 250PA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/c'C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, VGS = 0V
- - 150 Vos = 24V, I/ss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 37 - - S Vos = 15V, ID = 12A
Qg Total Gate Charge - 34 50
Qgs1 Pre-N/th Gate-to-Source Charge - 9.1 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.5 - nC I/cs = 4.5V
di Gate-to-Drain Charge - 12 - ID = 12A
ngdr Gate Charge Overdrive - 10 - See Fig. 16
st Switch Charge (Qgs2 + di) - 15 -
Qoss Output Charge - 21 - nC Ws = 15V, I/ss = 0V
td(on) Turn-On Delay Time - 25 - VDD = 15V, Vss = 4.5V©
t, Rise Time - 42 - ID = 12A
tum Turn-Off Delay Time - 34 - ns Clamped Inductive Load
tf Fall Time - 19 -
Ciss Input Capacitance - 4380 - I/ss = ov
Coss Output Capacitance - 940 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 430 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
ng se va ergy
an rgy 14
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 161© MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 620 integral reverse G E
(Body Diode) C) p-njunction diode. q
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 12A, VGS = 0V ©
tn Reverse Recovery Time - 39 59 ns TJ = 25°C, IF = 12A, VDD = 15V
Q, Reverse Recovery Charge - 36 54 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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