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IRLR3636IRN/a2500avai60V Single N-Channel HEXFET Power MOSFET in a D-Pak package


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IRLR3636
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tait Rectifier
Applications
. DC Motor Drive
PD - 96224
IIRLR3636PbF
IRLU3636PbF
HEXFETID Power MOSFET
q High Efficiency Synchronous Rectification in SMPS
o 1ni.nttrrupti.ble Power Supply Voss 60V
q High Speed Power Switching
q Hard Switched and High Frequency Circuits RDS(on) typ. 5.4mf2
max. 6.8mf2
Benefits G lr, (Silicon Limited) 99AO
q Optimized for Logic Level Drive lr, (Package Limited) 50A
0 Very Low RDS(ON) at 4.5V VGS
q Superior R*Q at 4.5V VGS
0 Improved Gate, Avalanche and Dynamic dV/dt D
Ruggedness 'igiii) 1(it
0 Fully Characterized Capacitance and Avalanche Ri'; l, '.
SOA I. S . '53
. Enhanced body diode dV/dt and dI/dt Capability G G
o Lead-Free D-Pak l-Pak
IRLR3636PbF IRLU3636PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 99 CO
ID @ To = 100°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 70 C) A
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V (Package Limited) 50
low: Pulsed Drain Current C) 396
Po @Tc = 25°C Maximum Power Dissipation 143 W
Linear Derating Factor 0.95 W/°C
Vas Gate-to-Source Voltage t16 V
dv/dt Peak Diode Recovery Ci) 22 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 170 mJ
|AR Avalanche Current © . A
EAR Repetitive Avalanche Energy C) See Fig.14, 15, 22a, 22b mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ru:; Junction-to-Case © - 1.05
ReJA Junction-to-Ambient (PCB Mount) - 50 com
ROJA Junction-to-Ambient - 110
1
02/06/09
Downloaded from: http://www.datasheetcata|o_q.com/
IRLR/U3636PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Em,DSS Drain-to-Source Breakdown Voltage 60 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 5mA©
RDSW) Static Drain-to-Source On-Resistance _- if, :3 m9 V: . J,lf,tC,t1f',),
Vesuh) Gate Threshold Voltage 1.0 - 2.5 V VDS = Vas, ID = 100pA
lass Drain-to-Source Leakage Current - - 20 VDS = 60V, Vss = 0V
- - 250 pA Vos = 60V, Vss = OV, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 I/ss = 16V
Gate-to-Source Reverse Leakage - - -100 nA l/ss = -16V
Rem) Internal Gate Resistance - 0.6 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 31 - - S VDS = 25V, ID = 50A
q, Total Gate Charge - 33 49 lo = 50A
ags Gate-to-Source Charge - 11 - VDS = 30V
di Gate-to-Drain ("Miller") Charge - 15 - nC Vas = 4.5V s
stnc Total Gate Charge Sync. (Qg - (Aw) - 18 - ID = 50A, vDS =ov, N/ss = 4.5V
tdmn, Turn-On Delay Time - 45 - VDD = 39V
t, Rise Time - 216 - ID = 50A
tion Turn-Off Delay Time - 43 - ns Re = 7.5 Q
tr Fall Time - 69 - Vss = 4.5V (9
Ciss Input Capacitance - 3779 - I/ss = 0V
Cass Output Capacitance - 332 - VDS = 50V
Crss Reverse Transfer Capacitance - 163 - pF f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 437 - Vas = 0V, Vos = 0V to 48V ©,See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related) © - 636 - I/ss = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 99 (D MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current A integral reverse G
. - - 396 . . .
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 v TJ = 25°C, ls = 50A, Vas = OV s
tr, Reverse Recovery Time - 27 - T J = 25°C VR = 51V,
- 32 _ ns TJ = 125°C IF = 50A
a,, Reverse Recovery Charge - 31 - nC Tu = 25°C di/dt = 100A/ps co
- 43 - T J = 125°C
IRRM Reverse Recovery Current - 2.1 - A To = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 50A. Note that current
limitation arising from heating of the device Ieds may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting To = 25°C, L = 0.136 mH
Rs = 259, has = 50A, Vas =10V. Part not recommended for use
above this value .
© ' 3 50A, di/dt S 1109 Alps, VDDS V(BR)DSS) Tu f 175°C.
Downloaded from: http://www.datasheetcata|o_q.com/
co Pulse width s: 400ps; duty cycle S 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vros is rising from 0 to 80% l/ross.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from O to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
© R9 is measured at T: approximately 90°C.

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