IRLR3410 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D -PAK I-PAKThe D-PAK is designed for surface mounting usingTO-252AA TO -251AAvap ..
IRLR3410PBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levelsup to 1.5 watts are possible in typical surface mount
IRLR3410TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3410TRR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3636 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsDC Motor DriveHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMP ..
IRLR3705Z ,Specifically designed for Automotive applications,this HEXFET Power MOSFETapplications.IRLR3705Z IRLU3705ZAbsolute Maximum RatingsParameter Max. Units(Silicon Limited)I @ T ..
ISPLSI2032A-80LT48I , In-System Programmable High Density PLD
ISPLSI2032A-80LT48I , In-System Programmable High Density PLD
ISPLSI2032E-110LJ44 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-110LT48 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-180LJ44 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-180LT44 , In-System Programmable SuperFAST High Density PLD
IRLR3410-IRLR3410PBF-IRLR3410TRR-IRLU3410PBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 17D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 12 AD C GSI Pulsed Drain Current …� 60DMP @T = 25°C Power Dissipation 79 WD CLinear Derating Factor 0.53 W/°CV Gate-to-Source Voltage ± 16 VGSE Single Pulse Avalanche Energy‚… 150 mJASI Avalanche Current…� 9.0 AARE Repetitive Avalanche Energy…� 7.9 mJARdv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 1.9θJCR Junction-to-Ambient (PCB mount) ** ––– 50 °C/WθJAR Junction-to-Ambient ––– 110θJA 15/11/98Downloaded from: http://www.ic-phoenix.com/stock/IRLR/U3410
