IRLR3103TRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 95085AIRLR/U3103PbF®HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-ResistanceD Sur ..
IRLR3103TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3105TRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures
IRLR3103TRLPBF-IRLR3103TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95085A
lRLR/U3103PbF
HEXFET® Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast Switching G
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
VDSS = 30V
A Rpsm) = 0.0199
ID = 55A©
D-PAK l-PAK
The D-PAK is designed for surface mounting using TO-252AA TO-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 550D
ID © Tc = 100°C Continuous Drain Current, I/ss © 10V 39© A
IDM Pulsed Drain Current (DOD 220
P9 @Tc = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
Vas Gate-to-Source Voltage * 16 V
EAS Single Pulse Avalanche Energy©© 240 mJ
IAR Avalanche CurrentO© 34 A
EAR Repetitive Avalanche Energy0)© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount) ** - 50 °C/W
RQJA Junction-to-Ambient - 1 10
1
12/7/04
lRLFl/U3103PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, lo = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.037 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.019 Vias =10V, ID = 33A 6)
Roam) Static Drain-to-Source On-Resistance _ - O.024 Q Vss = 4.5V, k, = 25A 9)
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = Vas, ID = 250pA
gfs Forward Transconductance 23 - - S Vos = 25V, ID = 34ACO
bss Drain-to-Source Leakage Current T, : Ji, pA VS: : gx’ V2: : g, TJ = 1 50°C
less Gate-to-Source Forward Leakage - - 100 n A Vias = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
% Total Gate Charge - - 50 ID = 34A
095 Gate-to-Source Charge - - 14 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 28 Yas = 4.5V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 9.0 - VDD = 15V
t, Rise Time - 210 - ns ID = 34A
td(off) Turn-Off Delay Time - 2O - Re = 3.49, l/ss = 4.5V
tt Fall Time 54 RD = 0.439, See Fig. 10 ©©
Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) Q: )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact© s
Ciss Input Capacitance - 1600 - VGS = 0V
Coss Output Capacitance - 640 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 50)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 55© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Oy05 - - 220 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 28A, Vas = 0V ©
trr Reverse Recovery Time - 81 120 ns Tu = 25°C, IF = 34A
Q" Reverse RecoveryCharge - 210 310 no di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD=15V,
Rs = 259, 'As = 34A. (See Figure 12)
© ISDS 34A, di/dt S 140A/ps, VDD S V(BR)DSS!
TJs175°c
starting TJ = 25°C, L = 300pH
6) Pulse width 5 300ps; duty cycle 5 2%
s Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
co This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
© Uses IRL3103 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
