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IRLR2705TRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95062A
IRLR2705PbF
IRLU2705PbF
Logic-Level Gate Drive HEXFET© Power MOSFET
Ultra Low On-Resistance
Surface Mount (IRLR2705) D
Straight Lead (IRLU2705) VDss = 55V
Advanced Process Technology
Fast Switching - A Roam) = 0.040Q
Fully Avalanche Rated
Lead-Free ID = 28AS
International
Tart, Rectifier
Description
Fifth Generation HEXFETs from International Rectiher utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak I-Pak
wave soldering techniques. The straight lead version (IRFU series) is for TO-252AA TO-MIAA
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @10V 28
ID @ Tc = 100°C Continuous Drain Current, VGS @10V 20 A
IDM Pulsed Drain Current (D 110
Po @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 Wl°C
VGS Gate-to-Source Voltage , 16 V
EAS Single Pulse Avalanche Energy© 110 m]
IAR Avalanche Current© 16 A
EAR Repetitive Avalanche Energy® 6.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range cc
Soldering Temperature, tor 10 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.2
ReJA Case-to-Ambient(PCB mount)" - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-1O Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
1/11/05
IRLR/U2705PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage 55 - - V VGs = 0V, ID = 250pA
AV
- - 0.040 VGS =10V, ID = 17A (4)
Roam) StaticDrain-to-Source On-Resistance - - 0.051 w Vss = 5.0V, ID = 17A ©
- - 0.065 VGs = 4.0V, ID = 14A (0
Vesuh) Gate Threshold Voltage 1.0 - 2.0 V Vos = Was, ID = 250pA
git Forward Transconductance 11 - - S Vos = 25V, ID = 16A©
loss Drain-to-Source LeakageCurrent _- _- Ji, pA xi; iix' V2: _- 8:: To = 1 50°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
% Total Gate Charge - - 25 ID = 16A
Qgs Gate-to-Source Charge - - 5.2 nC Vos = 44V
di Gate-to-Drain ("Miller")Charge - - 14 VGS = 5.0V, See Fig. 6 and 13 COO)
tom) Turn-On Delay Time - 8.9 - VDD = 28V
tr Rise Time - 100 - ns ID = 16A
td(off) Turn-Off Delay Time - 21 - Rs = 6.59, VGS = 5.0V
tf FallTime 29 RD =1.8Q,See Fig. 10 ©©
u, Internal Drain Inductance - 4.5 - nH 22:73-22:11, iii/l- D)
Ls IntemaISource Inductance - 7.5 - 22:1“ ciiizgfedie contact© s
Ciss InputCapacitance - 880 - VGS = 0V
Coss OutputCapacitance - 220 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 94 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 28 A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 17A, VGS = 0V 6)
trr Reverse Recovery Time - 76 110 ns T: = 25''C, IF = 16A
Q, Reverse RecoveryCharge - 190 290 nC di/dt = 100A/ps (90)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max.junction temperature. ( See fig. 11 )
© VDD-- 25V, starting TJ = 25°C, L = 610pH
Rs = 259., IAS-- 16A. (See Figure 12)
© Iso S16A, di/dt S 270Alps, VDD S V(BR)ross,
Tus 175°C
© Pulse width 3 300ps; duty cycle S 2%.
(S) Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
© This is applied for l-PAK, Ls of D-PAK is measured between
lead and center of die contact.
© Uses IRLZ34N data and test conditions.
