IRLR024NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR024TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRLR024Z ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRLR024Z IRLU024ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous ..
IRLR024ZTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR110 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.633A
IRLRHO
IlRLU110
lLe'taatitrmal
TOR Rectifier
HEXFET6 Power MOSFET
. Dynamic ..
IRLR110A ,Power MOSFET
ISPLSI1048E-90LT , In-System Programmable High Density PLD
iSPLSI2032 , In-System Programmable High Density PLD
ISPLSI2032 , In-System Programmable High Density PLD
ISPLSI2032-110LT44 , In-System Programmable High Density PLD
ISPLSI2032-110LT44 , In-System Programmable High Density PLD
ISPLSI2032-110LT48 , In-System Programmable High Density PLD
IRLR024NTRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD- 95081A
IRLR024NPbF
IRLU024NPbF
HEXFET® Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive D
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology - A
Fast Switching G
Fully Avalanche Rated
Lead-Free S
VDSS = 55V
RDS(on) = 0.0659.
ID = 17A
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
xiii,))),,
wave soldering techniques. The straight lead version (IRFU series) is for D-Pak
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
IRLR024N PbF
IRLU024NPbF
Parameter
ID @ Tc = 25°C
Continuous Drain Current, Vas @ 10V
ID © To = 100°C
Continuous Drain Current, Vss @ 10V
Pulsed Drain Current (D
PD @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Sou rce Voltage
Single Pulse Avalanche Energy©
Avalan che Cu rre MG
Repetitive Avalanche Energy0)
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 1 0 seconds
300 (1 .6mm from case)
Thermal Resistance
Parameter
Typ. Max.
Junction-to-Case
Case-to-Ambient(PCB mount)"
Junction-to-Ambient
** When mounted on 1" square PCB (FR-4 or G-1O Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
12/6/04
IRLR/U024NPbF International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
AV
--- __- 0.065 Vss =10V, ID =1OA (4)
Rosm) StaticDrain-to-SourceOn-Resistanoe - - O.080 Q Vss = 5.0V, ID = 10A 9)
- - 0.110 VG3=4.0V, ID--9.0A(9
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V I/cs = Vas, ID = 250PA
git Forward Transconductance 8.3 - - S Vos = 25V, ID = 11A
. - - 25 Vos = 55V, l/ss = OV
I D -t - L k t A
DSS ram 0 Source ea ageCurren _ _ 250 y VDS = 44V, l/ss = 0V, To = 150°C
l Gate-to-Source Forward Leakage - - 100 n A Vss = 16V
GSS Gate-to-Source Reverse Leakage - - -1OO Vss = -16V
Qg Total Gate Charge - - 15 ID = 11A
Qgs Gate-to-Source Charge - - 3.7 nC Vos = 44V
di Gate-to-Drain ("Miller")Charge - - 8.5 Vss = 5.0V, See Fig. 6 and 13 (9CO
td(on) Turn-On Delay Time --.- 7.1 __.- VDD = 28V
t, RiseTime - 74 - ns ko--11A
td(0ff) Turn-Off Delay Time - 20 - Ra = 129, l/ss = 5.0V
tf FallTime 29 RD = 2.49, See Fig. 10 ©©
. Between lead, D
Lo IntemalDrainlnductance - 4.5 - nH 6mm (0.25in.) )
from package G
Ls IntemaISource Inductance __- 7.5 --- and center of die contact s
Ciss InputCapacitance - 480 - VGS = ov
Coss OutputCapacitance - 130 - pF VDs = 25V
Crss Reverse TransferCapacitance - 61 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 A showing the
ISM Pulsed Source Current 72 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage --.- --.- 1.3 V Tu = 25°C, Is = 11A, VGS = 0V 6)
tr, Reverse RecoveryTime - 60 90 ns To = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 130 200 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by (ii) Pulse width g 300ps; duty cycle 3 2%.
max. junction temperature. (See fig. 11)
© VDD = 25V,starting Tu = 25°C. L = 790pH © This is applied for I-PAK, Ls of D-PAK is measured between
Ra = 259, bur-- 11A. (See Figure 12) lead and center of die contact
© Iso S11A, di/dt s 290A/us, VDD S V(BR)DSS: © Uses IRL224N data and test conditions.
T J 3 175°C
2
