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IRLR024N-IRLR024NPBF-IRLR024NTR-IRLR024NTRL-IRLU024N-IRLU024NPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD- 91363E
International
. . IRLR024N
Tart, Rectifier IRLU024N
HEXFET0 Power MOSFET
o Logic-Level Gate Drive D
0 Surface Mount (IRLR024N) VDss = 55V
0 Straight Lead (IRLU024N)
0 Advanced Process Technology 1 A RDSWD = 0.0659
0 Fast Switching G
0 Fully Avalanche Rated ID = 17A
Description
Fifth Generation HEXFET6 Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efhcient device for use in
a wide variety of applications. l
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for D-Pak l-Pak
through-hoie mounting applications. Power dissipation levels up to 1.5 watts IRLR024N IRLU024N
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @10V 12 A
IDM Pulsed Drain Current C) 72
Po @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 68 m]
IAR Avalanche Current© 11 A
EAR Repetitive Avalanche Energy© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range cc
Soldering Temperature, for 1 0 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.3
ROJA Case-to-Ambient(PCB mount)" - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
2/10/00
IRLR/U024N International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage 55 - - V VGs = 0V, ID = 250pA
AV
- - 0.065 VGS =10V, ID = 10A ©
Roam) StatiCDrain-to-SourceOn-Resistance - - 0.080 f2 Vss = 5.0V, ID = 10A ©
- - 0.110 VGs=4.OV, ID=9.OA®
Vesuh) Gate Threshold Voltage 1.0 - 2.0 V Vos = Was, ID = 250pA
git Forward Transconductance 8.3 - - S Vos = 25V, ID = 11A
. - - 25 Vos = 55V, Vss = 0V
loss Drain-to-Source LeakageCurrent - - 250 pA Vros = 44V, Ves = 0V, To = 150°C
l Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -16V
% Total Gate Charge - - 15 ID = 11A
Qgs Gate-to-Source Charge - - 3.7 nC Vos = 44V
di Gate-to-Drain ("Miller")Charge - - 8.5 VGS = 5.0V, See Fig. 6 and 13 ©©
tom) Turn-On Delay Time - 7.1 - VDD = 28V
tr Rise Time - 74 - ns ID =11A
td(off) Turn-Off Delay Time - 20 - Rs = 12n, l/ss = 5.0V
tf Fall Time 29 RD = 2.49, See Fig. 10 Cr)(5)
. Between lead, D
u, IntemaIDrainlnductanoe - 4.5 - nH 6mm (0.25in.) E )
Ls IntemalSouroe Inductance - 7.5 - rom pac age .
and center of die contact s
Ciss InputCapacitance - 480 - VGS = 0V
Coss OutputCapacitance - 130 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 MOSFET symbol D
(Body Diode) - - 7 A showing the
ISM Pulsed Source Current 72 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 11A, VGS = 0V ©
trr Reverse Recovery Time - 60 90 ns T: = 25''C, IF = 11A
Q, Reverse RecoveryCharge - 130 200 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width s seeps; duty cycle LC 2%.
max. junction temperature. (See Fig. 11)
© N/oo = 25V, starting TJ = 25''C, L = 790PH 6) This is applied for I-PAK, Ls of D-PAK is measured between
Rs = 259, IAS-- 11A. (See Figure 12) lead and center ofdie contact
© Iso S11A,di/dts 290Alps, VDD S V(BR)ross, © Uses IRLZ24N data and test conditions.
T J 3 175°C
2
