IRLML6402TRPBF-- ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 FootprintG 1 L ..
IRLML9301TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packagePD - 96310CIRLML9301TRPbFHEXFET Power MOSFETV -30 VDSV± 20 V G 1GS MaxRDS(on) max 64 3 DmΩ(@V = - ..
IRLML9303 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packageFeatures and Benefits
IRLML9303TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packagePD - 97519BIRLML9303TRPbFHEXFET Power MOSFETV-30 VDSV± 20 VGS Max
IRLML6402TRPBF-IRLML6402TRPBF--
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
International
ISBR Rectifier
|RLML6402PbF
Ultra Low On-Resistance
HEXFET® Power MOSFET
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm) G
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free S
Description
VDSS = -20V
RDSM = 0.0659
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device designthatHEXFET') power MOSFETs are well knownfor, provides
the designerwith an extremely efficientand reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the MicroSTM, is ideal
forapplications where printed circuit board space is ata premium. The low
profile (<1.1mm) of the Micros allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.
Micr03TM
Standard Pack
Base Part Number Package Type Form Quantity Orderable Part Number
IRLML6402TRPbF MicroSTM (SOT-23) Tape and Reel 3000 IRLML6402TRPbF
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -3.7
ID @ TA-- 70°C Continuous Drain Current, Vss @ -4.5V -2.2 A
IDM Pulsed Drain Current (D -22
PD @TA = 25°C Power Dissipation 1.3 W
Po @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy) 11 mJ
Vas Gate-to-Source Voltage i 12 V
TJ,TSTts Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© 75 100 "C/W
© 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IQQR |RLML6402PbF
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.009 - V/°C Reference to 25°C, lo = -1mA ©
Roam) Static Drain-to-Source On-Resistance - O.050 O.065 Q Vss = M.5V, ID = -3.7A ©
- 0.080 0.135 VGS = -2.5V, ID = -3.1A ©
Vesuh) Gate Threshold Voltage -O.4O -O.55 -1.2 V Vos = Vas, ID = -250pA
gfs Forward Transconductance 6.0 - - S Vos = -10V, ID = -3.7A ©
loss Drain-to-Source Leakage Current _- _- If PA x2: : Zigx x: : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
09 Total Gate Charge - 8.0 12 ID = -3.7A
Qgs Gate-to-Source Charge - 1.2 1.8 no Vos = -10V
di Gate-to-Drain ("Miller") Charge - 2.8 4.2 Vss = -5.0V ©
td(on) Turn-On Delay Time - 350 - VDD = -10V
t, Rise Time - 48 - ns ID = -3.7A
td(off) Turn-Off Delay Time - 588 - Rs = 899
tt Fall Time - 381 - RD = 2.79
Ciss Input Capacitance - 633 - Vas = 0V
Coss Output Capacitance - 145 - pF VDs = -10V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -22 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -1.0A, Vas = 0V ©
trr Reverse Recovery Time - 29 43 ns Tu = 25°C, IF = -1.0A
0,, Reverse RecoveryCharge - 11 17 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on 1" square single layer 102. copper FR4 board,
max. junction temperature. steady state.
© Pulse width 3 400ps; duty cycle f 2%. co Starting Tu = 25°c, L = 1.65mH
Rs = 259, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
© 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
