IRLL3303TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLM110A ,N-CHANNEL MOSFET
IRLM110A ,N-CHANNEL MOSFET
IRLM120A ,N-CHANNEL MOSFET
IRLM120A ,N-CHANNEL MOSFET
IRLM210A ,N-CHANNEL MOSFET
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016E-100LJN , In-System Programmable High Density PLD
ISPLSI1016E100LT44 , In-System Programmable High Density PLD
ISPLSI1016E-100LT44 , In-System Programmable High Density PLD
IRLL3303TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
PD- 95223
Tart, Rectifier IRL -3303PbF
. Surface Mount HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Logic-Level Gate Drive D
. Fast Switching VDSS - 30V
. Ease of Paralleling _
. Advanced Process Technology A RDS(on) = 0.031Q
o Ultra Low On-Resistance G
o Lead-Free ID = 4.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized devicedesignthatHEXFET PowerMOSFETs
arewell known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The SOT-223 package is designed for surface-mount
using vaporphase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick- S O T Al 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Powerdissipation
of 1 .0Wis possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5
In @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6 A
In @ TA = 70°C Continuous Drain Current, VGS © 10V* 3.7
IDM Pulsed Drain Current co 37
Po @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Vss Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy© 140 mJ
IAR Avalanche Current0) 4.6 A
EAR Repetitive Avalanche EnergyCD 0.10 mJ
dv/dt Peak Diode Recovery dv/dt G) 1.3 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)' 93 120 o C /W
ReJA Junction-to-Amb. (PCB Mount, steady state)" 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, tor comparison with other SMD devices.
04/27/04
IRLL3303PbF International
To.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.034 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.031 Q N/ss = 10V, lo = 4.6A ©
- - 0.045 N/ss = 4.5V, ID = 2.3A G)
VGS(th) Gate Threshold Voltage 1.0 - - V Vros = VGs, ID = 250pA
gfs Forward Transconductance 5.5 - - S Vos = 10V, ID = 2.3A
. - - 25 Vos = 30V, VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - 250 PA Vros = 24V, VGS = OV, T J = 125°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -16V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 16V
09 Total Gate Charge - 34 50 lo = 4.6A
Qgs Gate-to-Source Charge - 4.4 6.5 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - 10 16 VGS = 10V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 7.2 - Vor, = 15V
tr Rise Time - 22 - ns ID = 4.6A
td(off) Turn-Off Delay Time - 33 - Rs = 6.29
tr Fall Time - 28 - Ro = 3.29, See Fig. 10 ©
Ciss Input Capacitance - 840 - VGS = 0V
Cogs Output Capacitance - 340 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 0 91 MOSFET symbol D
(Body Diode) ' A showing the
ISM Pulsed Source Current 37 integral reverse G
(Body Diode) (O p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 4.6A, VGS = 0V ©
trr Reverse Recovery Time - 65 98 ns To = 25°C, IF = 4.6A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Specification changes
Rev. ft Parameters Old spec. New spec. Comments Revision Date
1 Vgsah) (Max.) 2.5V No spec. Removed VGS(th) (Max). Specification 11/1/96
1 VGS (Max.) 120 116 Decrease VGs (Max). Specification 11/1/96
Notes:
co Repeti.tive rating; pulse width limited by © ISD g 4.6A, di/dt g 11OA/ps, VDD g V(BR)DSS:
max. junction temperature. (See fig. 11 ) Tus: 150°C
© VDD = 15V, starting To = 25°C, L = 13mH © Pulse width S 300ps; duty cycle S 2%.
Rs = 25Q, IAS-- 4.6A. (See Figure 12)
2
