IRLIZ44NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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IRLIZ44NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 95456
IRL Z44NPbF
HEXFET© Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated G
Lead-Free
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of '
applications. FE'.'.',,".,'...".-.,,
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
D l/DSS = 55V
A RDS(on) = 0.022Q
ID = 30A
TO-22O FU LLfAK
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 30
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 22 A
IDM Pulsed Drain Current CD© 160
PD ttTc = 25''C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
Vss Gate-to-Source Voltage , 16 V
Eps Single Pulse Avalanche Energy©© 210 m]
IAR Avalanche Current0)© 25 A
EAR Repetitive Avalanche EnergyCD 4.5 ttt)
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 3.3 o
ROJA Junction-to-Ambient - 65 CAN
6/23/04
IRLIZ44NPbF
International
IDR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID = 1mA©
- - 0.022 Ves =10V,ID = 17A CD
Rom”) Static Drain-to-Source On-Resistance - - 0.025 Q Vss = 5.0V, ko = 17A ©
- - 0.035 Vcs = 4.0V, ID = 14A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250pA
gtt Forward Transconductance 21 - - S Vos = 25V, ID = 25A©
. - - 25 V05 = 55V, Vss = 0V
IDSS Drain-to-Source Leakage Current - - 250 PA Vos = 44V, Vss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -100 Veg = -16V
% Total Gate Charge - - 48 ID = 25A
Qgs Gate-to-Source Charge - - 8.6 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 25 VGS = 5.0V, See Fig. 6 and 13 COO)
tdon) Turn-On Delay Time - 11 - VDD = 28V
t, Rise Time - 84 - ns ID = 25A
td(ott) Turn-Off Delay Time - 26 - Rs = 3.49, Ves = 5.0V
tf Fall Time 15 RD =1.1Q,See Fig. 10 (96)
. Between lead, D
LD Internal Drain Inductance - 4.5 - H 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - n from package G
and center of die contact s
Ciss Input Capacitance - 1700 - Veg = 0V
Cass Output Capacitance - 400 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 30 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) ©© - - 160 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 17A, Vss = 0V (4)
trr Reverse Recovery Time - 80 120 ns Tu = 25°C, IF = 25A
Qrr Reverse RecoveryCharge - 210 320 PC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting T., = 25°C, L = 470pH
Rs = 259, IAS-- 25A. (See Figure 12)
C3) ISD S 25A, di/dt S 270A/ps, VDDS N/(me)coss,
TJS 175°C
GD Pulse width 3 300ps; duty cycle S 2%.
S t=60s, f=60Hz
© Uses IRLZ44N data and test conditions
