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IRLI640N/a1avaiPower MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)


IRLI640 ,Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)applications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
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IRLI640
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
PD - 9.1237
IRLI64OG
IrttetttatiiEtal
IOR Rectifier
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation = 2.5KVRMSG) L)
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V "
Fast Switching
Ease of paralleling
VDSS = 200V
RDS(on) = 0.189
ID = 9.9A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 5.0V 9.9
ID @ Tc = 100°C Continuous Drain Current, Ves @ 5.0V 6.3 A
IDM Pulsed Drain Current OD 40
PD @Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 W/''C
VGs Gate-to-Source Voltage t10 V
EAS Single Pulse Avalanche Energy © 290 mJ
IAR Avalanche Current® 9.9 A
EAR Repetitive Avalanche Energy (D 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsuc Junction-to-Case - - 3.1 0
Ram Junction-to-Ambient - - 65 CAN
Revision 0
IRLI640G
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
DSSIATJ Breakdown Voltage Temp. Coefficient - 0.27 - V/°C Reference to 25''C, ID = 1mA
RDSON) Static Drain-to-Source On-Resistance - - 0.18 n VGS = 5.0V, Io = 5.9A ©
- - 0.27 VGS = 4.0V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = VGs, ID = 250pA
9ts Forward Transconductance 16 - - S Vros = 50V, ID = 10A
loss Drain-to-Source Leakage Current - - 25 pA I/os = 200V, I/ss = 0V
- - 250 Vros = 160V, I/ss = 0V, TJ = 160°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 10V
Gate-to-Source Reverse Leakage - - -100 VGS = -10V
Qg Total Gate Charge - - 66 ID = 17A
Qgs Gate-to-Source Charge - - 9.0 nC I/rss = 160V
di Gate-to-Drain ("Miller") Charge - - 38 I/ss = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.0 - ns VDD = 100V
tr Rise Time - 83 - ID = 17A
td(off) Turn-Off Delay Time - 44 - Rs = 4.69
k Fall Time - 52 - R9 = 5.79, See Fig. 10 ©
. Between lead, 0
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) (2
Ls Intemal Source Inductance -- 7.5 - from package . a i)
and center of die contact q
Ciss Input Capacitance - 1800 - VGs = 0V
Coss Output Capacitance - 400 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol 7,.-.“
(Body Diode) - - 9.9 showing the A (rd'),
ISM Pulsed Source Current A integral reverse SQ m ()
(Body Diode) OD - - 40 p-n junction diode. g‘
Vso Diode Forward Voltage - - 2.0 V To = 25°C, Is = 9.9A, VGS = 0V 6)
trr Reverse Recovery Time - 310 470 ns To = 25''C, IF = 17A
Qrr Reverse RecoveryCharge - 3.2 4.8 pC di/dt = 100A/ps 0)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting To = 25°C, L = 4.4mH
RG = 259, IAS = 9.9A. (See Figure 12)
(3 Isro f 17A, di/dt f 150Alys, VDD S V(BR)DSSv
Tvs: 150°C
S t=60s, f=60Hz
© Pulse width s: 300ps; duty cycle f 2%.
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