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IRLB3036PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-97357
Tait Rectifier
IlRLl33036PbF
HEXFETID Power MOSFET
Applications
. BPhMgftfq' Drives h R tifi ti . SMPS D Voss 60V
q lg "tl ync ronous ec I ma Ion In RDS(on) typ. 1.9mQ
o Uninterruptible Power Supply
q High Speed Power Switching G max. 2.4mQ
. Hard Switched and High Frequency Circuits Ir, (Silicon Limited) 270ACO
s ID (Package Limited) 195A
Benefits
. Optimized for Logic Level Drive
. Very Low RDS(ON) at 4.5V VGS
. Superior R*Q at 4.5V VGS
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
. Fully Characterized Capacitance and Avalanche
TO-220AB
SOA FLB3036PbF
0 Enhanced body diode dV/dt and dI/dt Capability
o Lead-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 27000
ID @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 190C) A
lr) @ TC = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 195
G, Pulsed Drain Current © 1100
PD @Tc = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
Vas Gate-to-Source Voltage :16 V
dv/dt Peak Diode Recovery Ci) 8.0 V/ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy (3 290 mJ
IAR Avalanche Current C) . A
EAR Repetitive Avalanche Energy s See Fig. 14, 15, 22a, 22b mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case © - 0.40
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient (PCB Mount) (8)@ - 62
1
12/08/08
IRLB3036PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 60 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.061 - V/°C Reference to 25°C, ID = 5mA©
Ros Static Drain-to-Source On-Resistance - 1.9 2.4 m9 Vss = lov, ID = 165A ©
(on) - 2.2 2.8 l/ss = 4.5V, ID = 140A CO
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 VDS = 60V, I/ss = 0V
- - 250 pA Vos = 60V, I/ss = OV, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 I/ss = 16V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -16V
Rem) Internal Gate Resistance -- 2.0 - n
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 340 - - S Vos = 10V, ID = 165A
Q, Total Gate Charge - 91 140 ID = 165A
Qgs Gate-to-Source Charge - 31 - Vos = 30V
di Gate-to-Drain ("Miller") Charge - 51 - nC Vss = 4.5V s
stnc Total Gate Charge Sync. (Qg - 09d) - 40 - ID = 165A, vDs =ov, Vss = 4.5V
tum) Turn-On Delay Time - 66 - Va, = 39V
tr Rise Time - 220 - ID = 165A
tom Turn-Off Delay Time - 110 - ns Re = 2.19
t, Fall Time - 110 - Vss = 4.5V Cs)
Ciss Input Capacitance - 11210 - Vss = 0V
Coss Output Capacitance - 1020 - Vos = 50V
Crss Reverse Transfer Capacitance - 500 - pF f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related)© - 1430 - Vss = 0V, VDS = 0V to 48V ©
Coss eff. (TR) Effective Output Capacitance (Time Related) © - 1880 - I/ss = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 2 MOSFET symbol D
(Body Diode) 70 showing the
ISM Pulsed Source Current - - A integral reverse G
. 1100 . . .
(Body Diode) (3) p-n Junction diode. S
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 165A, Vss = 0V s
t" Reverse Recovery Time - 62 - T J = 25°C VR = 51V,
- 66 - ns Tu = 125°C IF =165A
Q,, Reverse Recovery Charge - 310 - Tu = 25°C di/dt = 100A/ps ©
- 360 - nC Tu = 125°C
|RRM Reverse Recovery Current - 4.4 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(D Calcuted continuous current based on maximum allowable junction © Pulse width 5 400ps; duty cycle 3 2%.
temperature Bond wire current limit is 195A. Note that current © Cass eff. (TR) is a fixed capacitance that gives the same charging time as
limitation arising from heating of the device Ieds may occur with COSS while Vos is rising from O to 80% Voss.
some lead mounting arrangements. © Coss eff. (ER) is a fixed capacitance that gives the same energy as
Q) Repetitive rating; pulse width limited by max. junction Coss while VDs is rising from O to 80% Vross.
temperature. When mounted on 1" square PCB (FR-4 or G-10 Material). For
6) Limited by TJmax, starting TJ = 25°C. L = 0.021mH recommended footprint and soldering techniquea refer to applocation
Rs = 259, IAS; = 165A, Vcss =10V. Part not recommended for use note # AN- 994 echniques refer to application note #AN-994.
above this value . © Reis measured at Tu approximately 90''C.
© ISD S 165A, di/dt f 430A/ps, VDDS V(BR)DSS, To I 175°C.
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