IRL530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
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Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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resistance and can dissipate up to 2.0W in a t ..
IRL540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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IRL530N
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91348C
International
TOR, Rectifier IRL530N
HEXFET© Power MOSFET
Logic-Level Gate Drive D
Advanced Process Technology VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature , A RDS(on) = 0.109
Fast Switching G
Fully Avalanche Rated
ID = 17A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial-applications atpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current © 60
PD @Tc = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 WI°C
VGS Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy© 150 mJ
IAR Avalanche CurrentC0 9.0 A
EAR Repetitive Avalanche Energyc0 7.9 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 1 .9
R903 Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1/09/04
IRL530N International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV
- - 0.100 VGS =10V,lo = 9.0A ©
Roam) Static Drain-to-Source On-Resistance _ - 0.120 Q VGS = 5.0V, ID = 9.0A ©
- - 0.150 VGS = 4.0V, ID = 8.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250PA
9ts Forward Transconductance 7.7 - - S Vros = 25V, ID = 9.0A
loss Drain-to-Source Leakage Current T, : Ji, PA V2: , ggS/VVZ:S=_OSVTJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VCs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
q, Total Gate Charge - - 34 ID = 9.0A
Qgs Gate-to-Source Charge - - 4.8 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 20 l/ss = 5.0V, See Fig. 6 and 13 G)
tdmn) Turn-On Delay Time - 7.2 P-f-- VDD = 50V
tr Rise Time - 53 - ns ID = 9.0A
fawn) Turn-Off Delay Time - 30 - RG = 6.09, VGS = 5.0V
tf Fall Time 26 R9 = 5.59, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - nH t,tr/r/',)1' fl)
Ls Intemal Source Inductance - 7.5 - from package . G BE
and center of die contact s
Ciss Input Capacitance - 800 - l/ss = 0V
Coss Output Capacitance - 160 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)CO - - 60 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 9.0A, VGS = 0V ©
trr Reverse Recovery Time - 140 210 ns TJ = 25°C, IF = 9.0A
Qrr Reverse RecoveryCharge - 740 1100 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
C) Starting To = 25°C, L = 3.7mH
Rs = 259, IAS-- 9.0A. (See Figure 12)
C3) Iso s 9.0A, di/dt s 540A/ps, VDD s V(BRmss,
T J g 175°C
GD Pulse width 3 300ps; duty cycle 3 2%
