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IRL520NPBFIRN/a20000avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRL520NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFEFS are well Known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
PD- 95668
IRL520 N PbF
yii)(Fiir)i)wg(yyET
Voss = 100V
Roswn) = 0.18Q
s ID = 10A
T03720AR
The T0-CC20 package is universally preferred for all
commerciaI-ind ustrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-22O
contribute to its wide acceptance th roughout the
industry.
Absolute Maximum Ratings
Param eter Max. Units
b tp TC = 25°C Continuous Drain Current, Vss Cl 10V 10
ID tt Tc = 100°C Continuous Drain Current, Veg C) 10V 7.1 A
bs, Pulsed Drain Current co 35
PD@TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/“C
l/ss Gate-to-Source Voltage , 16 V
EAS Single Pulse Avalanche Energy0) 85 ml
IAR Avalanche Current0) 6.0 A
EAR Repetitive Avalanche Energy0) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (5) 5.0 V/ns
Tu Operating Junction and -55 to + 175
Tsre Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibfoin (1.1 Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rrc Junction-ttAV - 3.1
Recs Case-to-Sink. Flat, Greased Surface 0.50 - ''C/W
RQJA Junction-to-Ambient - 62
1
8/2/04
http://www.datas
heetcataloq.com/
IRL520NPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VcBmDsg Drain-to-Source Breakdown Voltage 100 - - V Ws = ov, b = 250uA
AVSRyss/iSTo Breakdown Voltage Temp. Coefficient - 0.11 - W'C Reference to 25''C, ID = 1mA
- - 0.18 Veg =10V, b = 6.0A CO
RDSW) Static Drain-to-Source On-Resistance - _ 0.22 Q Ves = 5.0V, |D = 6.0A G)
- - 0.26 Ws = 4.0V, ID = 5.0A 3)
Vesum Gate Threshold Voltage 1.0 - 2.0 V Ws = Veg, ID = 250PA
ge, Forward Transcondu ctance 3.1 - - S Ws = 25V, ID = 6.0A
les Drain-to-Source Leakage Current :: :: 22550 PA VS: =" g33YV::S=_OS/\.ITJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vos = 16V
Gate-to-Source Reverse Leakage - - -100 Vos = -16V
Qg Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 nC Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 10 Vos = 5.0V, See Fig. 6 and 13 a)
tam) Turn-On Delay Time - 4.0 - VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
tam; Turn-Off Delay Time - 23 - Ro = 119, Vss = 5.0V
tr Fall Time 22 RD = 8.29, See Fig. 10 G)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact 3
Css Input Capacitance - 440 - Vss = 0V
Cass Output Capacitance - 97 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 10 MOSFET symbol D
(Body Diode) A showing the >
ISM Pulsed Source Current integral reverse 3
(Body Diode) Cot) - - 35 p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V Tu = 25"C, Is = 6.0A, Vss = 0V G)
trr Reverse Recovery Time - 110 160 ns Tu = 25''C, ls =6.0A
2, Reverse RecoveryCharge - 410 620 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
C) Repetitive rating; pulse width limited by © (sc, I 6.0A. di/dt I 340A/ps, VDD I V(BRJDSS'
max. junction temperature. ( See fig. 11 ) Tuf 175''C
© Starting Tu = 25''C, L = 4.7mH © Pulse width S 300ps; duty cycle S 2%.
Ro = 259. IAS = 6.0A. (See Figure 12)
2

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