IRL3803STRL ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL3803STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Wm' Ti?i6Lte Maximum Ratings
Parameter Max. Units
l, © Tc = 25°C Continuous Drain ..
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Advanced Process Technology
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IRL3803STRL
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD- 91319E
R_38038/L
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3803S)
Low-profile through-hole (IRL3803L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
HEXFET© Power MOSFET
VDSS = 30V
RDS(on) = 0.0069
ID =14OA©
highest power capability and the lowest possible on- D2Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3803L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 140©
ID @ To = 100°C Continuous Drain Current, Vss @ 10V© 98© A
IDM Pulsed Drain Current ODS 470
PD @TA = 25''C Power Dissipation 3.8 W
Pro @Tc = 25''C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Ves Gate-to-Source Voltage tl6 V
EAS Single Pulse Avalanche Energy©© 610 ml
IAR Avalanche Current0) 71 A
EAR Repetitive Avalanche EnergyCD 20 m]
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc, Junction-to-Case - 0.75 o
ROJA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 CA/V
www.lrf.com 1
11/11/02
IRL3803S/L International
TOR Rectifier
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, In = 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
. . . - - 0.006 VGS =1OV, ID = 71A (D
Roam) Static Drain-to-Source On-Resistance - - 0.009 n VGs = 4.5V, ID = 59 A G)
VGS(th) Gate Threshold Voltage 1.0 - V Vos = Veg, ID = 250pA
gig Forward Transconductance 55 - - S l/ns = 25V, ID = 71A©
loss Drain-to-Source Leakage Current - - 25 PA Vns = 30V, VGS = 0V
- - 250 Vos = 24V, VGs = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = -16V
% Total Gate Charge - - 140 ID = 71A
Qgs Gate-to-Source Charge - - 41 nC l/ns = 24V
di Gate-to-Drain ("Miller") Charge - - 78 V63 = 4.5V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 14 - VDD = 15V
t, Rise Time - 230 - ID = 71A
td(0ff) Turn-Off Delay Time - 29 - Rs = 1.39
tf FalITime - 35 - RD = 0.209, See Fig. 10 @6)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 5000 - VGs = 0V
Coss Output Capacitance - 1800 - pF Vrs = 25V
Crss Reverse Transfer Capacitance --- 880 --- f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymbol D
(Body Diode) - - 140© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 470 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 71A, VGs = 0V ©
trr Reverse Recovery Time - 120 180 ns To = 25°C, IF = 71A
Qrr Reverse Recovery Charge - 450 680 nC di/dt = 100A/ps C9(5)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L3+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 5 300ps; duty cycle : 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting To = 25''C, L = 180pH s Uses IRL3803 data and test conditions.
Ro = 259. us-- 71A. (See Figure 12) © Calculated continuous current based on maximum allowable
© ISD 5 71A, di/dt s 130A/ps, V00 3 V(BR)DSS, junction tery"rratye1or rtco.ryyfryied current-handling of the
TJS 175°C package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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