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IRL3713 |IRL3713IR N/a6000avai30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL3713SIRN/a450avai30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRL3713 -IRL3713S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier SMPS MOSFET
Applications
o High Frequency Isolated DC-DC
PD - 94184D
IRL3713
IRL3713S
IRL3713L
HEXFET® Power MOSFET
Converters with Synchronous Rectification V R max (mf2) I
for Telecom and Industrial Use DSS DSton) D
q High Frequency Buck Converters for 30V 3.0@VGs = 10V 260A©
Computer Processor Power
. 100% Rs Tested
Benefits . " iii)
Ifi, v
o Ultra-Low Gate Impedance "i1ifii'ji1 t
0 Very Low RDS(on) at 4.5V VGS l,
. Fully Characterized Avalanche Voltage TO-220AB szak TO-262
and Current IRL3713 IRL3713S IRL3713L
Absolute Maximum Ratings
Symbol Parameter Max Units
Vos Drain-Source Voltage 30 V
Vss Gate-to-Source Voltage , 20 V
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 260©
ko @ To = 100°C Continuous Drain Current, I/ss @ 10V 180© A
IDM Pulsed Drain Current C) 1040©
PD @Tc = 25''C Maximum Power Dissipation 330 W
PD @Tc = 100°C Maximum Power Dissipation 170
Linear Derating Factor 2.2 W/°C
T J, TSTG Junction and Storage Temperature Range -55 to +175 ''C
Thermal Resistance
Symbol Parameter Typ Max Units
Rm Junction-to-Case © - 0.45
chs Case-to-Sink, Flat, Greased Surface 6) 0.50 _
ROJA Junction-to-Ambient C90) - 62 "C/W
ROJA Junction-to-Ambient (PCB Mount) S© - 40
Notes OD through (D are on page 11
1
11/12/03
IRL3713/S/L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(anmss Drain-to-Source Breakdown Voltage 30 --.- - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.027 - V/°C Reference to 25°C, ID = 1mA
. . . - 2.6 3.0 I/ss =10V, ID = 38A ©
Roam, Static Drain-to-Source On-Resistance mn
- 3.3 4.0 Vss = 4.5V, ID = 30A ©
Vesnn) Gate Threshold Voltage 1.0 - 2.5 V Ihos = VGS, ID = 250pA
- - 50 I/os = 30v, VGS = OV
loss Drain-to-Source Leakage Current - - 20 HA Vos = 24V, Ves = 0V
- - 100 I/rs = 24V, VGS = ov, T., = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Dynamic til Tu = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
gfs Forward Transconductance 76 - - S I/os = 15V, ID = 30A
09 Total Gate Charge - 75 110 ID = 30A
095 Gate-to-Source Charge - 24 - nC Vrs = 15V
di Gate-to-Drain ("Miller") Charge - 37 - I/ss = 4.5V ©
Qoss Output Gate Charge 61 92 I/ss = OV, Ihos = 15V
Re Gate Resistance 0.5 - 3.4 Q
td(on) Tum-On Delay Time - 16 - VDD = 15V
t, Rise Time - 160 - ID = 30A
tron) Tum-Off Delay Time - 40 - ns Rs = 1.89
t: Fall Time - 57 - Vas = 4.5V ©
Ciss Input Capacitance - 5890 - VGS = 0V
Cass Output Capacitance - 3130 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 630 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ Max Units
EAS Single Pulse Avalanche Energy© _ 1530 mJ
|AR Avalanche Current co _ 46 A
Diode Characteristics
Symbol Parameter Min Typ Max Units Conditions
ls Continuous Source Current _ - 260 © A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current _ - 1040 (E integral reverse
(Body Diode) ©© p-n junction diode.
. - 0.80 1.3 To = 25''C, IS = 30A, I/tss = OV ©
VSD Diode Forward Voltage _ 0.68 - V To = 125°C, ls = 30A, VGs = 0V ©
trr Reverse Recovery Time - 75 110 ns TJ = 25°C, IF = 30A, VR = 0V
ar, Reverse Recovery Charge - 140 210 nC di/dt = 100/Ups ©
tr, Reverse Recovery Time - 78 120 ns To = 125°C, IF = 30A, VR = 20V
Ar Reverse Recovery Charge - 160 240 nC di/dt = 100A/ps ©
2
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