IC Phoenix
 
Home ›  II36 > IRL3402,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL3402 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRL3402N/a1avai20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL3402IRN/a432avai20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRL3402 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL3402 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1697IRL3402PRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V ..
IRL3402PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation levels to approximately 50 watts. The low thermal resistance and l ..
IRL3705N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1370CIRL3705N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 5 ..
IRL3705NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRL3705NS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP521-4 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP752R , Smart Power High-Side-Switch for Industrial Applications


IRL3402
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-9.1697
TOR, Recti fi er PRELIMINARY
HEXFET® Power MOSFET
o Advanced Process Technology D
o Optimized for 4.5V-7.0V Gate Drive VDSS = 20V
o Ideal for CPU Core DC-DC Converters
0 Fast Switching "E RDS(on) = 0.019
. . I = 85AS
Description s D
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost. (si_jeii.-',,1i,.ii.
The TO-220 package IS universally preferred for all ts-"''''';'")"'
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 5.0V 856D
ID @ To = 100°C Continuous Drain Current, VGS © 5.0V 54 A
IDM Pulsed Drain Current co 340
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.91 W/°C
I/ss Gate-to-Source Voltage i 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ps)
EAs Single Pulse Avalanche Energy© 290 mJ
IAR Avalanche Current00 51 A
EAR Repetitive Avalanche Energy(0 11 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
10/31/97

IRL3402 International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.010 VGS = 4.5V, b = 51A (4)
RDs(on) Static Drain-to-Source On-Resistance - - 0.008 Q VGS = 7.0V, ID = 51 A ©
VGS(th) Gate Threshold Voltage 0.70 - - V Vos = VGS, ID = 250pA
git Forward Transconductance 65 - - S VDS = 10V, ID = 51A
. - - 25 VDS = 20V, VGS = 0V
IDss Drain-to-Source Leakage Current - - 250 PA Vos = 16V, l/GS = OV, T J = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 10V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = -10V
Qg Total Gate Charge - - 78 ID = 51A
Qgs Gate-to-Source Charge - - 18 nC Ws = 10V
di Gate-to-Drain ("Miller") Charge - - 30 VGS = 4.5V, See Fig. 6 ©
Kon) Turn-On Delay Time - 10 - VDD = 10V
tr Rise Time - 140 - ns ID = 51A
td(off) Turn-Off Delay Time - 80 - RG = 5.on, I/ss = 4.5V
tf Fall Time - 120 - RD = 0.199, ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - 6mm (0.25in.) E
nH from package G )
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3300 - VGS = 0V
Coss Output Capacitance - 1400 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 510 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - MS . _
(Body Diode) A showing the ar
ISM Pulsed Source Current - - 340 integral reverse G (tLl
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 51A, VGS = 0V co
trr Reverse Recovery Time - 72 110 ns To = 25°C, IF = 51A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle S 2%.
max. junction temperature.
© Starting T: = 25°C, L = 220pH s Calculated continuous current based on maximum allowable
Rs = 259, IAS = 51A. junction temperature; for recommended current-handling of the
© la, 3 51A, di/dt s: 82A/ps, VDD s V(BR)DSS, package refer to Design Tip # 93-4
T J 3 150°C

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED