IRL2203NPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91366IRL2203N®HEXFET Power MOSFETl Advanced Process TechnologyDV = 30Vl Ultra Low On-Resistanc ..
IRL2203NS ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable of accommodatingdie sizes up to HE ..
IRL2203NSTRL ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsSymbol Parameter Max Units
IRL2203N -IRL2203NPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91366
International
TOR Rectifier IRL2203N
HEXFET© Power MOSFET
o Advanced Process Technology D
0 Ultra Low On-Resistance Voss = 30V
0 Dynamic dv/dt Rating
0 175°C Operating Temperature . rn RDS(on) = 7.0mQ
0 Fast Switching G
0 Fully Avalanche Rated ko = 116A0)
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This beneht,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, providesthe designerwith an extremely efficient "
and reliable device for use in a wide variety ofapplications. _ K.
The TO-220 package is universally preferred for all "v., 1. w
commerciaI-industrial applications at power dissipation "e
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 116©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 82 A
IDM Pulsed Drain Current C) 400
Pro @Tc = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
Ves Gate-to-Source Voltage i 16 V
IAR Avalanche Current© 60 A
EAR Repetitive Avalanche EnergyCD 18 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 0.85
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
3/16/01
IRL2203N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Was = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.029 - VI°C Reference to 25°C, ID = 1mA
. . . - - 7.0 N/ss =10V,ID = 60A ©
Roswn) Static Drain-to-Source On-Resistance - - 10 mn N/ss = 4.5V, ID = 48A ©
Vesah) Gate Threshold Voltage 1.0 - - V VDs = VGs, ID = 250PA
Ts Forward Transconductance 73 - - S Vos = 25V, ID = 60/W)
bss Drain-to-Source Leakage Current T, T, 22550 pA x3: J. 32x [e, , g, To = 125°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA N/ss = -16V
q, Total Gate Charge - - 60 ID = 60A
Qgs Gate-to-Source Charge - - 14 nC VDs = 24V
di Gate-to-Drain ("Miller") Charge - - 33 V68 = 4.5V, See Fig. 6 and 13
tam...) Turn-On Delay Time - 11 - VDD = 15V
tr Rise Time - 160 - ID = 60A
td(ott) Turn-Off Delay Time - 23 - Rs = 1.89
If Fall Time - 66 - VGS = 4.5V, See Fig. 10 60
Lo Internal Drain Inductance - 4.5 - Between Isad, D
6mm (0.25in.)
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 3290 - N/ss = 0V
Coss Output Capacitance - 1270 - Ws = 25V
Crss Reverse Transfer Capacitance - 170 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 1320S290© mJ IAS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 116 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 400 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 60A, VGS = 0V ©
trr Reverse Recovery Time - 56 84 ns TJ = 25°C, IF = 60A
Gr Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting To = 25°C, L = 0.16mH
Re = 25n, I AS = 60A, Ves=10V (See Figure 12) s This is a typical value at device destruction and represents
© Iso 3 60A, di/dt s 110A/ps, vDD s: V(BR)DSS,
T J 3 175°C
© Pulse width 3 400ps; duty cycle f 2%.
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
