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IRL1404PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
zaRliuctifier
PD - 95588A
|R_1404PbF
HEXFET8 Power MOSFET
. Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 40V
0 Dynamic dv/dt Rating
o 175°C O_per_atmg Temperature A RDSW) = 4.0mQ
o Fast Switching G
0 Fully Avalanche Rated I - 160A©
o Lead-Free s
Description
Seventh Generation HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely Pt
low on-resistance per silicon area. This benefit, combined with the fast f
switching speed and ruggedized device design that HEXFET power Ic. ”3‘
MOSFETs are well known for, provides the designer with an extremely 'r, "K Is,,
efficient and reliable device for use in a wide variety of applications. i):
The TO-22O package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to TO-220AB
its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas © 10V 160©
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 110© A
IDM Pulsed Drain Current © 640
PD ©Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vas Gate-to-Source Voltage t 20 V
EAs Single Pulse Avalanche Energy© 620 mJ
IAR Avalanche CurrentCD 95 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient (PCB Mounted)© - 62
1
09/27/10
RL1404PbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(ngss Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.038 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 4.0 mn Vas = lov, ID = 95A ©
- - 5.9 Vas = 4.3V, ID = 40A (9
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vas, ID = 250pA
gts Forward Transconductance 93 - - S Vos = 25V, ID = 95A
bss Drain-to-Source Leakage Current - - 20 PA Vros = 40V, l/ss = 0V
- - 250 Vos = 32v, N/es = OV, Tu = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
09 Total Gate Charge - - 140 ID = 95A
_Qg§ Gate-to-Source Charge - - 48 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - - 60 Vss = 5.0V, See Fig. 6 (9
td(on) Turn-On Delay Time - 18 - ns VDD = 20V
tr Rise Time - 270 - ID = 95A
td(oit) Turn-Off Delay Time - 38 - Rs = 2.59 VGS = 4.5V
tt Fall Time - 37 - RD = 0.259 (D
Lo Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package GE )
and center of die contact s
Gigs Input Capacitance - 6590 - Vas = 0V
Coss Output Capacitance - 1710 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 350 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6650 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1510 - Vss = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s -- 1480 - Vss = 0V, VDs = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 160© A showing the
IsM Pulsed Source Current - - 640 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 95A, Vas = 0V (9
trr Reverse Recovery Time - 63 94 ns TJ = 25°C, I; = 95A
0,, Reverse RecoveryCharge - 170 250 nC di/dt = 100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
0) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11).
© Starting TJ = 25°C, L = 0.35mH
Rs = 259, MS = 95A. (See Figure 12).
© Iso S 95A, di/dt f 160A/ps, l/oo S V(BR)DSS!
T J f 175°C.
6) Pulse width f 300ps; duty cycle f 2%.
© Coss eff. is a fixed capacitance that gives the same charging time
as Cass while Vos is rising from O to 80% Voss.
© Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
