IRL1104 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resista ..
IRL1104SPBF ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD -95576IRL1104SPbFIRL1104LPbF Logic-Level Gate Drive®HEXFET Power MOSFET Advanced Process Techn ..
IRL1404 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package ®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = 40V ..
IRL1404 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. Thelow thermal resistance and ..
IRL1404PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. Thelow thermal resistance and l ..
IRL1404S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP521-4 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP752R , Smart Power High-Side-Switch for Industrial Applications
IRL1104
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -91805
|RL1104
HEXFET® Power MOSFET
International
TOR Rectifier
Logic-Level Gate Drive
Advanced Process Technology D
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature " A
Fast Switching
o Fully Avalanche Rated
Description s
Fifth Generation HEXFET© power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that ,
HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient device for use in a
wide variety of applications.
VDSS = 40V
RDS(on) = 0.008n
ID --104A6)
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The lowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter
ID @ Tc = 25°C
Continuous Drain Current, VGs @ 10V
ID @ Tc = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current(0
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ©
Avalanche Current0)
Repetitive Avalanche Energy0)
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
IO Ibf-in (1.1N-m)
Thermal Resistance
Parameter
Typ. Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
0.50 -
Junction-to-Ambient
10/19/99
IRL1104
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.04 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resis- T, _- 33(1): n x2: , 4'/2',l',C/'ij1/',',
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = VGS, ID = 250pA
gig Forward Transconductance 53 - - S Vos = 25V, ID = 62A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 40V, VGS = 0V
- - 250 Vros = 32V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 16V
Gate-to-Source Reverse Leakage - - -100 Vss= -16V
09 Total Gate Charge - - 68 ID = 62A
Qgs Gate-to-Source Charge - - 24 nC i Vos = 32V
di Gate-to-Drain ("Miller") Charge - - 33 _ VGs = 4.5V, See Fig. 6 and 13 ©
tam") Turn-On Delay Time - 18 - Vroro = 20V
tr Rise Time - 257 - ID = 62A
tam Turn-Off Delay Time - 32 - ns Rs = 3.69, l/GS = 4.5V
tr Fall Time - 64 - _ RD = 0.49, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - 'etc,'.'),':.')' D
nH from package G )
Ls Internal Source Inductance - 7.5 - ' .
and center of die contact s
Ciss Input Capacitance - 3445 - VGS = 0V
Coss Output Capacitance - 1065 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 270 - | f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1046) MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 416 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 62A, l/cs = 0V ©
tr, Reverse Recovery Time - 84 126 ns T: = 25°C, IF = 62A
Qrr Reverse Recovery Charge - 223 335 nC di/dt = 1OOA/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting TJ = 25°C, L = 0.18mH
Rs = 259, [AS =62A. (See Figure 12)
© ISD S 62A, di/dt S 217Alps, VDD I V(BR)DSS,
T J 3 175°C
(4) Pulse width s: 300ps; duty cycle s: 2%.
s Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
