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IRKH26/12 |IRKH2612IRN/a8avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
IRKH26-12 |IRKH2612IRN/a14avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
IRKL26/12 |IRKL2612IRN/a5avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
IRKL26-12 |IRKL2612IRN/a12avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
IRKT26/12 |IRKT2612IRN/a8avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
IRKT26/16 |IRKT2616IRN/a100avai1600V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
IRKT26-12 |IRKT2612IRN/a12avai1200V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package


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IRKH26/12-IRKH26-12-IRKL26/12-IRKL26-12-IRKT26/12-IRKT26/16-IRKT26-12
400V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
Bulletin 127130 rev.G 10/02
International
TOR Rectifier IRK.26 SERIES
THYRISTORI DIODE and ADD-A-pak" GEN V Power Modules
THYRISTORI THYRISTOR
Features Benefits
I: High Voltage ll Up to 1600V
tl Industrial Standard Package D Full compatible TO-240AA 27 A
El Thick AI metal die and double stick bonding [I High Surge capability
El Thick copper baseplate [1 Easy Mounting on heatsink
ll UL E78996 approved ll AIP, DBC insulator
ll 3500VRMS isolating voltage ll Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the The electrical terminals are secured against axial pull-out:
excellent thermal performance obtained by the usage of they are foted to the module housing via a click-stop feature
Direct Bonded Copper substrate with superior already tested and proved as reliable on other IR modules.
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device. . . .
The Cu baseplate allow an easier mounting on the Electrical Description
majority of heatsink with increased tolerance of surface
These modules are intended for general purpose
roughness and improve thermal spread.
high voltage applications such as high voltage regu-
TheGenerationVofAAPmoduleismanufacturedwithout lated power supplies, lighting circuits, temperature
hard mold, eliminating in this way any possible direct and motor speed control circuits, UPS and battery
stress on the leads. charger.
Major Ratings and Characteristics
Parameters IRK.26 Units
IT(AV)°r |F(AV)
@ 85°C
|O(RMS) C) 60
ITSM @50Hz 400
IFSM @60Hz 420 A
I2t @ 5on 800 A25
@ 60Hz 730 A25
|2\/t 8000 ANs
VRRM range 400to 1600 V
TSTG - 40 to 125 oC
T: -40to125 "C
(*) As AC switch.
1
IRK.26 Series
Bulletin 127130 rev.G 10/02
International
IEER Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , m.1ximum VRSM, maximum VDRM , max. repetitive IRRM
T b Voltage repetitive non-repetitive peak off-state voltage, lDRM
ype num er Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.26 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.26 Units Conditions
INAV) Max. average on-state
current (Thyristors) 27 180° conduction, half sine wave,
IHAV) Max. average forward 27 TC=85°C
current (Diodes)
I Max. continuous RMS
O(RMS) on-state current. 60 '-Crl-r; or '-Crl-r:
As AC switch A I(RMS) |(RMS)
I Max. eak,onec cle 400 t=10ms No volta e
TSM p . . y . g Sinusoidal
or non-repetitive on-state 420 t=8.3ms reapplied half wave
G, or forward current 335 t=10ms 100%VRRM Initial TJ = TJ max.
350 t=8.3ms reapplied
470 t=10ms To-- 25°C,
490 t=8.3ms no voltage reapplied
Pt Max. Pt for fusing 800 t=10ms No voltage
730 t=8.3ms reapplied Initial TJ=TJ max.
560 A2 t=10ms 100%VRRM
510 t=8.3ms reapplied
1100 t=10ms To=25"C,
1000 t=8.3ms no voltage reapplied
1211 Max. 1211 for fusing (1) 8000 Azx/s t=0.1to10ms,no voltage reappl. T v--T J max
vmo) Max. value of threshold 0.92 v Lowlevel (3) T J = T J max
voltage (2) 0.95 High level (4)
rt Max. value ofon-state 12.11 9 Lowlevel (3) T, = T, max
slope resistance (2) 11.82 Highlevel (4)
VTM Max. peak on-state or ITM=7‘X'T(AV) TJ=25°C
- 1.95 v -
Vo, forward voltage |FM_"X|F(AV)
di/dt Max. non-repetitive rate T., = 25°C, from 0.67 VDRM‘
of rise of turned on 150 Alps |TM =1: x IWM, IQ = 500mA,
current t,< 0.5 us,tp>Gps
Ir, Max. holding current 200 TJ=25°C, anode supply=6V,
mA resistive load, gate open circuit
t Max. latching current 400 T J=25°C, anode supply=6V, resistive load
(1) 121 for time t, = 12111 x Vt,, (2) Average power = V1110) x ITW) + r, x (IT(RMS))2 (3) 16.7% x IT x1AV < I < n x IAV
(4)»anAV

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