IRHE7130 ,100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC packageElectrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ M ..
IRHF57130 ,100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF packageElectrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)Parameter Min Typ Max Units Test ..
IRHF7430SE ,500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF packageElectrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)Parameter Min Typ Max Units Test ..
IRHM7250 ,200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA packageElectrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)Parameter Min Typ Max Units Test ..
IRIS4007 ,30W Output DC-DC Integrated Switchers in a TO-220 (5-Leads) packageFeatures• Primary current mode control, and secondaryPackagesvoltage mode control•Vcc over-voltage ..
IRIS4009 ,30W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) packageData Sheet No. PD60196( )IRIS4009 KINTEGRATED SWITCHER
ISP1183BS ,Low-power Universal Serial Bus interface device with DMA
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
ISP1362EE/01 ,ISP1362; Single-chip Universal Serial Bus On-The-Go controller
ISP1505ABS , ULPI Hi-Speed USB host and peripheral transceiver
IRHE7130
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
Internet
TOR, Rectifier
RADIATION HARDENED
MOSFET
SURFCACE MOUNT(LCC-18)
PD - 91806C
IRHE71 3O
JANSR2N7261 U
100V, N-CHANNEL
REF: MlL-PRF-19500l601
RAD Hard" HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number -
IRHE7130 100K Rads (Si) 0.189 8.0A JANSR2N7261U 65% tsie-' A
IRHE3130 300K Rads (Si) 0.189 8.0A JANSF2N7261U IE 5, 1:1:
IRHE4130 500K Rads (Si) 0.189 8.0A JANSG2N7261U 'trtijil
|RHE8130 1000K Rads (Si) 0.189 8.0A JANSH2N7261U
International Rectifer'sRADHardHEXFET6 technology LCC-18
provides high performance power MOSFETs for
space applications. This technology has over a
decade of roven erformance and reliabilit in
satellite LTI))'),','). These devices have béen Features:
characterized for both Total Dose and Single Event II Single Event Effect (SEE) Hardened
Effects (SEE). The combination of low Rdson and II Low RDS(0n)
low gate charge reduces the power losses in " Low Total Gate Charge
switching applications such as DC to DC converters I Simple Drive Requirements
and motor control. These devices retain all of the well II Ease of Paralleling
established advantages of MOSFETs such as voltage I: Hermetically Sealed
control, fast switching, ease of paralleling and II Surface Mount
temperature stability of electrical parameters. a Light Weight
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
t @ VGS = 12V, Tc = 25''C Continuous Drain Current 8.0
t @ VGS = 12V, TC = 100°C Continuous Drain Current 5.0 A
IDM Pulsed Drain Current (D 32
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 130 mJ
IAR Avalanche Current Cf) 8.0 A
EAR Repetitive Avalanche Energy (D 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range °C
Package Mounting Surface Temperature 300 (for 5s)
Weight 0.42 (Typical) g
For footnotes refer to the last page
1
04/28/06
IRHE7130,
JANSR2N7261U
Pre-Irradiation
Electrical Characteristics © T) = 25°C (Unless Otherwise Specified)
Parameter Mm Typ Max Umts Test Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.10 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.18 Q VGS = 12V, ID =5.0A (4)
Resistance - - 0.185 VGS = 12V, ID = 8.0A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 2.5 - - S (8 VDS > 15V, IDS = 5.0A ©
loss Zero Gate Voltage Drain Current - - 25 “A VDs= 80V ,VGs=0V
- - 250 VDS = 80V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 n A VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 VGS = -20V
at: Total Gate Charge - - 50 VGS =12V, ID =8.0A
Qus Gate-to-Source Charge - - 12 nC VDS = 50V
Qgd Gate-to-Drain (Niller') Charge - - 20
td(on) Turn-On Delay Time - - 25 VDD = UN, ID =8.0A
tr Rise Time - - 55 ns VGS =12V, RG = 7.59
td(otty Turn-Off Delay Time - - 55
tt Fall Time - - 45
Ls + LD Total Inductance - 6.1 - nH Measured from the center of drain
pad to center of source pad
Ciss Input Capacitance - 1100 - VGS = 0V, VDS = 25V
quq Output Capacitance - 310 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 55 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 8.0 A
ISM Pulse Source Current (Body Diode) CD - - 32
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, ls = 8.0A, VGS = 0V (ii)
trr Reverse Recovery Time - - 350 ns T] = 25°C, IF = 8.0A, di/dt f 100A/ps
QRR Reverse Recovery Charge - - 3.0 pC VDD S 50V (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0
RthJ-PCB Junction-to-PC Board - 19 - "CIW Soldered to a copper clad PC board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
