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IRGPC50FD2IR N/a19avai600V Copack IGBT in a TO-3P (TO-247AC) package


IRGPC50FD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGPC50FD2
600V Copack IGBT in a TO-3P (TO-247AC) package
trttetttattEtal PD-9.800
IOR Rectifier IRG PC50FD2
INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
Features C
. Switching-loss rating includes all "tail" losses VCES = 600V
. HEXFREDTM soft ultrafast diodes
. Optimized for medium operating frequency (1 to VCE t < 1 7V
10kHz) See Fig. 1 for Current vs. Frequency curve G (sat) _ .
@VGE = 15V, Ic = 39A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifer's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-2‘47AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 70
Ic @ To = 100°C Continuous Collector Current 39
ICM Pulsed Collector Current (D 280 A
ILM Clamped Inductive Load Current © 280
IF @ TC = 100''C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 280
VGE Gate-to-Emitter Voltage i 20 V
Pro @ TC = 25°C Maximum Power Dissipation 200 W
PD @ Tc = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N'm)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - IGBT - - 0.64
Rch Junction-to-Case - Diode - - 0.83 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 1
IRGPC50FD2 TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitler Breakdown Voltage © 600 - - V VGE = 0V, lc = 250pA
AV(BR)CES/ATJ Temp. Coeff. of Breakdown Voltage - 0.62 - V/°C VGE = 0V, k: = 1.0mA
Vegan) Collector-to-emitter Saturation Voltage - 1.6 1.7 Ic = 39A VGE = 15V
- 2.0 - V Ic = 70A See Fig. 2, 5
- 1.7 - Ic = 39A, To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250PA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -14 - mV/°C VCE = VGE, lc = 250PA
gfe Forward Transconductance (D 21 24 - S VCE = 100V, Ic = 39A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 6500 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V lc = 25A See Fig. 13
- 1.2 1.5 Ic = 25A, T: = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = EOV
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 110 170 Ic = 39A
Qge Gate - Emitter Charge (turn-on) - 20 30 n0 Vcc = 400V
Qgc Gate - Collector Charge (turn-on) - 50 75 See Fig. 8
Won) Turn-On Delay Time - 70 - T J = 25°C
tr Rise Time - 110 - ns Ic = 39A, Vcc = 480V
tum) Turn-Off Delay Time - 400 600 VGE = 15V, Rs = 5.09
t; Fall Time - 290 400 Energy losses include "tail" and
Eon Turn-On Switching Loss - 2.5 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 6.0 - mJ See Fig. 9, 10, 11, 18
ES Total Switching Loss - 8.5 13
Mon) Turn-On Delay Time - 68 - TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 100 - ns Ic = 39A, Vcc = 480V
tum) Turn-Off Delay Time - 760 - VGE = 15V, RG = 5.09
tr Fall Time - 520 - Energy losses include "tail" and
Ets Total Switching Loss - 14 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3000 - VGE = 0V
Cues Output Capacitance - 340 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 40 - f = 1.0MHz
trr Diode Reverse Recovery Time - 50 75 ns To = 25°C See Fig.
- 105 160 To = 125°C 14 Ir=25A
Irr Diode Peak Reverse Recovery Current - 4.5 10 A TJ = 25°C See Fig.
- 8.0 15 TJ =125°C 15 VR = 200V
G, Diode Reverse Recovery Charge - 112 375 nC To = 25°C See Fig.
- 420 1200 To = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps To = 25''C See Fig.
During tr, - 160 - To = 125°C 17
Notes:
(D Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
© Vcc=80%(VcEs), VsE=20V, L=10pH,
Rs-- 5.09, (See fig. 19)
© Pulse width 5.0ps,
single shot.
© Pulse width f 80ps; duty factor f 0.1%.
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