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IRGPC40UD2IRN/a50avai600V Copack IGBT in a TO-3P (TO-247AC) package


IRGPC40UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.O-247ACTAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGPC40UD2
600V Copack IGBT in a TO-3P (TO-247AC) package
lrtterittatii,Etal
IOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.808A
IRGPC40UD2
UItraFast CoPack IGBT
Features C
. Switching-loss rating includes all "tail" losses
. HEXFRED'" soft ultrafast diodes
- Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
n-channel
VCES = 600V
VCE(Sat) f 3.0V
@VGE = 15V, lc = 20A
Description
Co-packaged IGBTs are a natural extension of International Rectifer's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast m
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motorcontrol, UPS and powersupply applications. / / /
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 40
k: @ Tc = 100°C Continuous Collector Current 20
ICM Pulsed Collector Current (D 160 A
ILM Clamped Inductive Load Current © 160
IF @ Tc = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage , 20 V
PD @ Tc = 25°C Maximum Power Dissipation 160 W
Po @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rac Junction-to-Case - IGBT - - 0.77
Rac Junction-to-Case - Diode - - 1.7 °CNV
Recs Case-to-Sink, fiat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
|RGPC4OUD2 TOR
Electrical Characteristics © 1:, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Colledor-to-Emitter Breakdown Voltage 6) 600 - - V VGE = 0V, lc = 250PA
AV(BR)CESIATJ Temp. Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emi) Saturation Voltage - 2.2 3.0 lc = 20A VGE = 15V
- 2.7 - V lc = 40A See Fig. 2, 5
- 2.3 - lc = 20A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250pA
AVGE([h)/ATJ Temp. Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance © 11 18 - S VCE = 100V, Ic = 20A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 3500 VGE = OV, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V lc = 15A See Fig. 13
- 1.2 1.6 IC=15A,TJ=150°C
Kass Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 51 67 lc = 20A
099 Gate - Emitter Charge (tum-on) - 8.9 11 nC Vcc = 400V
Qgc Gate - Collector Charge (tum-on) - 20 33 See Fig. 8
Mon) Turn-On Delay Time - 63 - TJ = 25°C
tr Rise Time - 54 - ns k: = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 160 240 VGE = 15V, Rs = lon
tr Fall Time - 120 200 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.65 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 1.25 - mJ See Fig. 9, 10, 11, 18
ES Total Switching Loss - 1.90 3.0
Mon) Tum-On Delay Time - 65 - Tu = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 53 - ns Ic = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 280 - VGE = 15V, Rs = lon
tt Fall Time - 210 - Energy losses include "tail" and
Ets Total Switching Loss - 3.0 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1500 - VGE = 0V
Coes Output Capacitance - 190 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 17 - f = 1.0MHz
trr Diode Reverse Recovery Tlme - 42 60 ns TJ = 25°C See Fig.
- 74 120 TJ=125°C 14 |F=15A
Irr Diode Peak Reverse Recovery Current - 4.0 6.0 A TJ = 25''C See Fig.
- 6.5 10 To = 125°C 15 V R = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC To = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt = 200Alps
diirec)M/dt Diode Peak Rate of Fall of Recovery - 188 - Alps T: = 25°C See Fig.
During tr, - 160 - TJ = 125°C 17
Notes:
CO Repetitive rating; VGE=20V, pulse width © Vcc=80%(VcEs), VGE--20V, L=10pH, © Pulse width 5.0ps,
limited by max. junction temperature.
( See fig. 20 )
RG=1OQ, (See fig. 19)
© Pulse width 3 80ps,' duty factor s: 0.1%.
single shot.
ic,good price


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