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IRGP450U
500V Discrete IGBT in a TO-3P (TO-247AC) package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at w
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high- /
PD - 9.1033A
IRGP450U
UItraFast IGBT
n-channel
VCES = 500V
VCE(sat) S 3.2V
@VGE = 15V, lc = 33A
current applications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 500 V
lc @ To = 25°C Continuous Collector Current 59
lo @ Tc = 100°C Continuous Collector Current 33 A
ICM Pulsed Collector Current (D 120
ILM Clamped Inductive Load Current © 120
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
PD @ Tc = 25°C Maximum Power Dissipation 200 W
Pro @ Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - - 0.64
Recs Case-to-Sink, flat, greased surface - 0.24 - "CA/V
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGP450U TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 500 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-ttA/tor Breakdown Voltage (9 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)CESIATJ Temperature Cteif. of Breakdown Voltage - 0.41 - VIOC VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-emitter Saturation Voltage - 2.1 3.2 lc = 33A VGE = 15V
- 2.6 - V Ic = 59A See Fig. 2, 5
- 2.1 - Ic = 33A, T: =150°C
VGEW Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250PA
gfe Forward Transconductance (D 7.2 2.1 - S VCE = 100V, Ic = 33A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 500V
- - 2000 VGE = 0V, VCE = 500V, Tu = 150°C
IGES Gate-to-Emitler Leakage Current - - A100 nA VGE = i20V
Switching Characteristics @ l", = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 120 180 lc = 33A
Qge Gate - Emitter Charge (turn-on) - 22 33 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 41 62 VGE = 15V
tam") Tum-On Delay Time - 33 - To = 25°C
tr Rise Time - 26 - ns Ic = 33A, Vcc = 400V
td(off) Tum-Off Delay Time - 110 170 VGE = 15V, Rs = 5.09
tf Fall Time - 91 140 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.73 -
Eoff Turn-Off Switching Loss - 0.25 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 0.98 1.5
tum”) Tum-On Delay Time - 31 - To = 150°C,
tr Rise Time - 29 - ns Ic = 33A, Vcc = 400V
tisiott) Tum-Off Delay Time - 160 - l/SE = 15V, Rs = 5.on
tf Fall Time - 110 - Energy losses include "tail"
Ets Total Switching Loss - 1.4 - mJ See Fig. 10, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2700 - VGE = 0V
Coes Output Capacitance - 280 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 34 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Rc-- 5.09, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width 3 80ps; duty factor f 0.1%.
S Pulse width 5.0ps,
single shot.
