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IRG6S330UIRN/a160avai330V Plasma Display Panel Trench IGBT in a D2-Pak package
IRG6S330UPBFIORN/a2226avai330V Plasma Display Panel Trench IGBT in a D2-Pak package


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IRG6S330U-IRG6S330UPBF
330V Plasma Display Panel Trench IGBT in a D2-Pak package
International
ISBR Rectif
Features
. Advanced Trench
q Optimized for Sustain and Energy Recovery
circuits in PDP applications
. Low VCEM) and Energy per Pulse (EPULSETM)
for improved panel efficiency
PD - 96217A
IRG6S330UPbF
PDP TRENCH IGBT
. High repetitive peak current capability
. Lead Free package
Description
Key Parameters
IGBT Technology Vce min 330 v
VCE(ON) typ. @ IC = 70A 1.80 V
Ins, max @ Tc-- 25°C 250 A
Tu max 150 °C
"Rif; "
G l, G C
E D2Pak
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnologyto achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
l/se Gate-to-Emitter Voltage t30 V
lc @ To = 25°C Continuous Collector Current, Vas @ 15V 70
lc @ TC = 100°C Continuous Collector, Vas @ 15V 40 A
Irv, @ To = 25°C Repetitive Peak Current (O 250
PD @TC = 25°C Power Dissipation 160 W
Po @Tc = 100°C Power Dissipation 63
Linear Derating Factor 1.3 W/°C
Tu Operating Junction and -40 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 seconds 300
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case © - 0.8 'C/W
1
09/11/09

IRG6S330UPbF International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 330 - - V Vss = OV, ICE = 1 mA
V(BR)ECS Emitter-to-Collector Breakdown Voltages 30 - - V VGE = OV, '05 = 1 A
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C. ICE = 1mA
- 1.25 - Vee = 15V, ICE = 25A ©
- 1.43 - l/ss = 15V, ICE = 40A Cl)
Vegan) Static Collector-to-Emitter Voltage 1.80 2.10 V VGE = 15V, log = 70A 6)
- 2.38 - l/ss = 15V, ICE = 120A Cl)
- 2.10 - Vss = 15V, ICE = 70A, TJ = 150°C (3
VGEnh) Gate Threshold Voltage 2.6 - 5.0 V VCE = Vas, ICE = 500PA
AVGE(th)/ATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
ICES Collector-to-Emitter Leakage Current - 2.0 20 VCE = 330V, VGE = 0V
- IO - l/cs = 330v, Vas = OV, TJ = 100°C
- 40 200 PA vCE = 330v, vGE = ov, Tu = 125°C
- 150 - l/cs = 330V, l/ss = 0V, TJ = 150°C
legs Gate-to-Emitter Forward Leakage - - 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage - - -100 VGE = -30V
gfe Forward Transconductance - 94 - S Vcs = 25V, ICE = 25A
q, Total Gate Charge - 86 - nC VCE = 200V, IC = 25A, VGE = 15V©
Qgc Gate-to-Collector Charge - 36 -
tam) Turn-On delay time - 39 - IC = 25A, Vcc = 196V
t, Rise time - 32 - ns Rs = Ion, L=200pH, LS: 150nH
tam) Turn-Off delay time - 120 - TJ = 25°C
t, Fall time - 55 -
tion) Turn-On delay time - 37 - IC = 25A, Vcc = 196V
t, Rise time - 33 - ns Rs = Ion, L=200pH, Ls-- 150nH
td(off) Turn-Off delay time - 159 - T, = 150°C
t, Fall time - 95 -
tst Shoot Through Blocking Time 100 - - ns Vcc = 240V, Var = 15V, Re: 5.1!)
- 943 - L = 220nH, C-- 0.40pF, Vas =15V
EPULSE Energy per Pulse pJ Vcc = 240v, HG: 5.10, T, = 25°C
- 1086 - L = 220nH, C= 0.40pF, Vas =15V
Vcc = 240v, Rs-- 5.19, Tu = 100°C
Class 2
ESD Human Body Model (Per JEDEC standard JESD22-A114)
Machine Model Class B
(Per EIA/JEDEC standard ElA/JESD22-A115)
Cies Input Capacitance - 2275 - Vss = 0V
cu, Output Capacitance - 108 - pF VCE = 30V
Cres Reverse Transfer Capacitance - 75 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 7.5 - from package
and center of die contact
Notes:
0) Half sine wave with duty cycle = 0.05, ton=2psec.
© Ro is measured at Tu of approximately 90°C.
© Pulse width f 400ps; duty cycle S 2%.
2

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