IRG6I330U ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications I max @ T = 25°C250 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSE T max150 °CJf ..
IRG6I330UPBF ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications.Absolute Maximum RatingsMax.Parameter UnitsVGate-to-Emitter Voltage ±30 VGEI @ T = 25° ..
IRG6S320U ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Gate-to-Emitter Voltage ±30 VGEI @ T = 2 ..
IRG6S320UPBF ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplicationsI max @ T = 25°C 160 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSET max150 °CJfo ..
IRG6S330U ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplications.Absolute Maximum RatingsMax.Parameter UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25° ..
IRG6S330UPBF ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplicationsI max @ T = 25°C250 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSET max150 °CJfor ..
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IRG6I330U-IRG6I330UPBF
330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak package
PD - 96192A
International
TOR Rectifier PDP TRENCH IGBT lRG6l330U PbF
Features . Key Parameters
. Advanced Trench IGBT Technology VCE mln 330 V
q Optimized for Sustain and Energy Recovery VCE(ON) typ. @ lc = 28A 1.30 V
circuits in PDP applications IRP max @ TC: 25°C 250 A
. Low VCEM) and Energy per Pulse (EPULSETM) T: max 150 °C
for improved panel efficiency
. High repetitive peak current capability
. Lead Free package C
_,....
'h _ "=1
'N, .. E
E TO-220AB
n-channel Full-Pak
Gate Collector Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnologyto achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vas Gate-to-Emitter Voltage :30 V
lc @ TC = 25°C Continuous Collector Current, VGE @ 15V 28 A
lc @ To = 100°C Continuous Collector, Vas @ 15V 15
' @ Tc = 25°C Repetitive Peak Current OD 250
PD @TC = 25°C Power Dissipation 43 W
PD @TC = 100°C Power Dissipation 17
Linear Derating Factor 0.34 W/°C
TJ Operating Junction and -40 to + 150 "C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10ltrin (1 .1N'm) N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case C) - 2.9 °C/W
1
09/11/09
IRG6l330UPbF
International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 330 - - V Vss = 0V, ICE = 1 mA
V(BR)ECS Emitter-to-Collector Breakdown Voltage© 30 - - V Vas = OV, log = 1 A
ABVCEs/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C. ICE = 1mA
- 1.13 - VsE--15V,lcE--15A©
- 1.30 1.55 Vss =15V, ICE = 28A (3
VCE(on) Static Collector-to-Emitter Voltage _ "d,] : V V: . 12V: l: . 2/) g
- 2.38 - l/ss =15v, ICE = 120A ©
_ 2.10 _ VGE= 15V, |CE=70A,TJ= 150°C ©
Varith) Gate Threshold Voltage 2.6 - 5.0 V VCE = VGE, ICE = 500pA
AVGEW/ATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
ICES Collector-to-Emitter Leakage Current - 2.0 20 VCE = 330V, Vas = 0V
- 10 - VCE = 330V, Vas = 0V, Tu = 100°C
_ 40 200 PA vCE = 330v, Vas = OV, TJ = 125°C
- 150 - VCE = 330V, Vas = 0V, TJ = 150°C
IGES Gate-to-Emir Forward Leakage - - 100 nA Vas = 30V
Gate-to-Emitter Reverse Leakage - - -100 I/ss = -30V
gfe Forward Transconductance - 94 - S VCE = 25V, ICE = 25A
q, Total Gate Charge - 86 - nC Vce = 200V, '0 = 25A, VGE = 15V©
Qgc Gate-to-Collector Charge - 36 -
tam) Turn-On delay time - 39 - IC = 25A, Vcc = 196V
t, Rise time - 32 - ns RG = 100, L=200pH, Ls-- 150nH
tom Turn-Off delay time - 120 - Tu = 25°C
ti Fall time - 55 -
ton) Turn-On delay time - 37 - IC = 25A, Vcc = 196V
t, Rise time - 33 - ns RG = Ion, L=200pH, LS: 150nH
tom Turn-Off delay time _ 159 - TJ = 150°C
ti Fall time - 95 -
tst Shoot Through Blocking Time 100 - - ns Vcc = 240V, Vas = 15V, Re: 5.19
L = 220nH, C-- 0.40pF, Var =15V
EPULSE Energy per Pulse - 943 - pJ Vcc = 240V, Ra-- 5.19, Tu = 25°C
_ 1086 _ L = 220nH, C= 0.40pF, vGE =15V
Vcc = 240v, Re: 5.19, TJ = 100°C
Class 2
ESD Human Body Model (Per JEDEC standard JESD22-A114)
Machine Model Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance - 2275 - I/ss = 0V
Coes Output Capacitance - 108 - pF VCE = 30V
Cres Reverse Transfer Capacitance - 75 - f = 1.0MHz, See Fig.13
Ls Internal Collector Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 7.5 - from package
and center of die contact
Notes:
© Half sine wave with duty cycle = 0.05, ton=2psec.
© Ro is measured at Tu of approximately 90°C.
© Pulse width f 400ps; duty cycle S 2%.
