IRG4RC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a D-Pak packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
IRG4RC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
IRG4RC10SDTR ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packagePD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT R ..
IRG4RC10SDTRL ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
IRG4RC10STR ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4RC10KD
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD91736A
IRG4RC10KD
Short Circuit Rated
UItraFast IGBT
Features
. Short Circuit Rated UItraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10ps @ 125°C, VGE = 15V
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
previous generation
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
VCES = 600V
G VCE(on) typ. = 2.39V
E @VGE = 15V, Ic = 5.0A
n-ch an nel
bridge configurations
. Industry standard TO-252AA package
Benefits
. Latest generation 4 IGBT's offer highest power density
motor controls possible
. HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses D-PAK
I For hints see design tip 97003 TO-252AA
Absolute Maximum Ratings
Parameter Max Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 9.0
lc @ Tc = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current C) 18 A
G, Clamped Inductive Load Current © 18
IF @ Tc = 1000 Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
tsc Short Circuit 1/)fithstand Time 10 ps
l/ss Gate-to-Emitter Voltage l 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 38
Po © Tc = 100°C Maximum Power Dissipation 15
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - IGBT - 3.3
Rm Junction-to-Case - Diode -r.-.- 7.0 mm]
ReJA Junction-to-Ambient (PCB mount)" - 50
Wt Weight 0.3 (0.01) - g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/30/00
International
IRG4RC10KD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage f 600 - - V VGE = 0V, k: = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.58 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.39 2.62 lc = 5.0A VGE = 15V
- 3.25 - V Ic = 9.0A See Fig. 2, 5
- 2.63 - k: = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance " 1.2 1.8 - S VCE = 50V, lc = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A See Fig. 13
- 1.4 1.7 l: = 4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 19 29 Ic = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.9 4.3 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 9.8 15 VGE = 15V
tdwn) Turn-On Delay Time - 49 -
t, Rise Time - 28 - ns To = 25°C
tum) Turn-Off Delay Time - 97 150 Ic = 5.0A, Vcc = 480V
tf Fall Time - 140 210 VGE = 15V, Rs = 100n
Eon Turn-On Switching Loss - 0.25 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.14 - mJ and diode reverse recovery
G Total Switching Loss - 0.39 0.48 See Fig. 9,10,14
tsc Short Circuit VWthstand Time 10 - - us Vcc = 360V, To = 125°C
VGE = 15V, Rs = 1009 , VCPK < 500V
td(on) Turn-On Delay Time - 46 - TJ = 150°C, See Fig. 10,11,14
tr Rise Time - 32 - ns Ic = 5.0A, Vcc = 480V
tum) Turn-Off Delay Time - 100 - VGE = 15V, Rs = 100n
tr Fall Time - 310 - Energy losses include "tail"
G Total Switching Loss - 0.56 - ml and diode reverse recovery
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 220 - VGE = 0V
Coes Output Capacitance - 29 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.5 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25°C See Fig.
- 38 57 To = 125°C 14 IF = 4.0A
lrr Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C See Fig.
- 3.7 6.7 TJ = 125°C 15 VR = 200V
er Diode Reverse Recovery Charge - 40 60 nC T J = 25°C See Fig.
- 70 105 To = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25°C See Fig.
During tr, - 235 - To = 125°C 17
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