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IRG4PSH71UIRN/a12000avai1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package


IRG4PSH71U ,1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 1200VCES frequencies 8 to 40kHz ..
IRG4PSH71UD ,1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA packageFeaturesC• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard swit ..
IRG4RC10K ,600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak packageFeaturesC• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and ..
IRG4RC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a D-Pak packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational TOR RectifieruanDTahTelJemD c E n-channel Vcss = 600V Vcson) typ. = 1.10V ..
IRG4RC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures• Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipa ..
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IRG4PSH71U
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
International
ISZR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. UItraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
. Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
. Creepage distance increased to 5.35mm
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. IGBTs optimized for specific application conditions
. Cost and space saving in designs that require
PD - 91685
IIRG4PSH71 U
UItraFast Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.50V
E @VGE=15V, lc=50A
n-channel
multiple, paralleled IGBTs SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 99 A
lc © Tc = 100°C Continuous Collector Current 50
ICM Pulse Collector Current OD 200
lo, Clamped Inductive Load current © 200
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 150 mJ
Pro @ TC = 25°C Maximum Power Dissipation 350 W
Po @ Tc = 100°C Maximum Power Dissipation 140
T J Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min Typ. Max. Units
Roc Junction-to-Case- IGBT - - 0.36 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ROJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20 0) N (kgf)
Wt Weight -- 6 (0.21) - g (oz.)
1
5/24/04
lRG4PSH71 U
International
IEER Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage © 1200 - - V Vss = OV, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 19 - - V Vss = 0V, Ic = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.78 - V/°C Vss = 0V, Ic = 1mA
- 2.52 2.70 v Ic = 70A Vas = 15V
VCE(on) Collector-to-Emitter Saturation Voltage - 3.17 - Ic = 140A See Fig.2, 5
- 2.68 -- IC = 70A, T: = 150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Threshold Voltage temp. coefficient - -9.2 - mV/°C VCE = VGE, Io = 1.0mA
gfe Forward Transconductance co 48 72 - S VCE = 100V, IC = 70A
ICES Zero Gate Voltage Collector Current - - 500 pA Vas = 0V, VCE = 12OOV
- - 2.0 I/es = 0V, VCE =10V
- - 5000 I/ss = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA l/ss = t20)/
Switching Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
a, Total Gate Charge (turn-on) - 370 560 IC = 70A
Qge Gate-to-Emitter Charge (turn-on) - 61 24 nC Vcc = 400V See Fig.8
ag,, Gate-to-Collector Charge (turn-on) - 120 50 l/ss = 15V
tam) Turn-On delay time - 51 - lc = 70A, Vcc = 960V
t, Rise time - 70 - ns VGE = 15V, Rs = 5.09.
taon Turn-Off delay time - 280 390 Energy losses include "tail"
t, Fall time - 170 260 See Fig. 9, 10, 11, 14
EL,n Turn-On Switching Loss - 4.77 -
Eoff Turn-Off Switching Loss - 9.54 - mJ
Etot Total Switching Loss - 14.3 15.8
two", Turn-On delay time - 49 - T, = 150°C, See Fig. 9, 10, 11, 14
t, Rise time - 70 - ns Ic = 70A, Vcc = 960V
tdist) Turn-Off delay time - 390 - Vas = 15V, Rs = 5.09
t, Fall time - 360 - Energy losses include "tail"
Ers Total Switching Loss - 25 - mJ
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 7280 - VGE = 0V
COes Output Capacitance - 290 - pF Vcc = 30V, See Fig.7
Cres Reverse Transfer Capacitance - 50 - f = 1.0MHz
Notes:
OD Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
© Vcc=80%(VcEs), VGE=20V, L=10pH, Re: 5.0 Q (figure 13a)
© Pulse width S 80ps; duty factor S 0.1%.
6) Pulse width 5.0ps, single shot.
co Repetitive rating; pulse width limited by maximumjunction temperature.

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