IRG4PC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4PC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageFeatures C Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
IRG4PC30WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4PC40F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4PC40FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packagePD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY D ..
IRG4PC40FDPBF ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
ISO7240A ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7240ADW ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7240ADWR ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
ISO7240ADWRG4 ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125ELECTRICAL CHARACTERISTICS: V and V at 5-V OPERATIONCC1 CC2, over recommended operating conditions ..
ISO7240C ,Quad Channel, 4/0, 25Mbps, Digital IsolatorElectrical Characteristics: V and V at 3.3 VCC1 CC213.6 Electrostatic Discharge Caution. 34Operatio ..
ISO7240CDW ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
IRG4PC30UD
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
International
:raRRectifier
PD 91462B
IRG4PC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UItraFast CoPack IGBT
Features
. UItraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
n-channel
VCES = 600V
@VGE = 15V, lc-- 12A
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
I Industry standard TO-247AC package
Benefits
. Generation -4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 23
IC @ Tc = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current C) 92 A
u, Clamped Inductive Load Current © 92
IF @ To = 100''C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
l/GE Gate-to-Emitter Voltage , 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 100
Po @ Tc = 100°C Maximum Power Dissipation 42
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 1.2
RQJC Junction-to-Case - Diode ------------ 2.5 ''CNV
Recs Case-to-Sink, flat, greased surface ------ 0.24 -
RNA Junction-to-Ambient, typical socket mount ---------- 40
Wt Weight ------ 6 (0.21) ------ g (oz)
1
12/30/00
International
IRG4PC30UD TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CE5 Collector-to-Emitter Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV(BR)CESIAT Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.95 2.1 k: = 12A VGE = 15V
- 2.52 - V l: = 23A See Fig. 2, 5
- 2.09 - Ic = 12A, T: = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250PA
gfe Forward Transconductance © 3.1 8.6 - S VCE = 100V, Ic = 12A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Fon/vard Voltage Drop ---- 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 Io =12A,Tu =150°C
IGEs Gate-to-Emitter Leakage Current - ---- A100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 50 75 Ic = 12A
Qge Gate - Emitter Charge (turn-on) - 8.1 12 nC Vcc = 400V See Fig. 8
Qqc Gate - Collector Charge (turn-on) - 18 27 VGE = 15V
tam“) Turn-On Delay Time - 40 - TJ = 25°C
tr RiseTime ---- 21 ---- ns Ic = 12A, Vcc = 480V
tam) Turn-Off Delay Time ---- 91 140 VGE = 15V, Rs = 239
tr FalITime - 80 130 Energy losses include "tail" and
Em Turn-On Switching Loss - 0.38 - diode reverse recovery.
Eur Turn-Off Switching Loss - 0.16 ---- mJ See Fig. 9, 10, 11, 18
E5 Total Switching Loss - 0.54 0.9
tam) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
t, RiseTime ---- 22 ---- ns k: = 12A, Vcc = 480V
tam) Turn-Off Delay Time ---- 120 ---- VGE = 15V, Rs = 239
tr FaIITime - 180 - Energy losses include "tail" and
E: Total Switching Loss - 0.89 - ntl diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Cas Output Capacitance - 73 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 14 - f = 1.0MHz
trr Diode Reverse Recovery Time ---- 42 60 ns To = 25°C See Fig.
- 80 120 To = 125°C 14 IF = 12A
In Diode Peak Reverse Recovery Current ---- 3.5 6.0 A To = 25°C See Fig.
-- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC To = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- Alps To = 25''C See Fig.
During tn ---- 120 ---- To = 125°C 17
