IRG4BC40K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeatures Short Circuit Rated UltraFast: optimized for highV = 600VCES operating frequencies >5.0 ..
IRG4BC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC40U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C• UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
IRG4BC40W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageFeatures Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor correct ..
IRG4BC40WS ,600V Warp 60-150 kHz Discrete IGBT in a D2Pak package IRG4BC40WSIRG4BC40WL
ISO7221ADRG4 ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics—2.8-V V and VCC1 CC212.3 Receiving Notification of Documentation Updates ..
ISO7221BD ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221BDR ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221CD ,Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221CDR ,Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221M ,Dual Channel, 1/1, 150Mbps Digital Isolator SLLS755O–JULY 2006–REVISED APRIL 2017• Added the DTI parameter to the IEC Package Characteristics ..
IRG4BC40K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD-91592B
IRGABCAOK
Short Circuit Rated
UItraFast IGBT
Features
. Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10ps @ 125°C, VGE = 15V
q Generation 4 IGBT design provides higher efficiency
than Generation 3
. Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 2.1V
E @VGE:15V, Ic=25A
n-channel
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Ts = 25°C Continuous Collector Current 42
lo @ To = 100°C Continuous Collector Current 25 A
ICM Pulsed Collector Current C) 84
ILM Clamped Inductive Load Current C) 84
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
Pro © To = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2 (0.07) - g (oz)
1
4/17/2000
IRG4BCM0K
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, IC = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, IC = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.46 - VPC VGE = 0V, Ic = 1.0mA
- 2.10 2.6 k; = 25A Vas =15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.70 - V Ic = 42A See Fig.2, 5
- 2.14 - lc=25A,TJ=150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 - ml/PC VCE = VGE, Ic = 250PA
gfe Forward Transconductance S 7.0 14 - S VCE = 100 V, lc = 25A
ICES Zero Gate Voltage Collector Current - - 250 pA Vas = OV, VCE = 600V
- - 2.0 Vss = 0V, VCE = 10V, To = 25°C
- - 2000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emitter Leakage Current - - 1100 n A VGE = t20)/
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 120 180 IC = 25A
096 Gate - Emitter Charge (turn-on) - 16 24 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 51 77 Vas = 15V
lawn) Turn-On Delay Time - 30 -
t, Rise Time - 15 - ns Tu = 25°C
td(oti) Turn-Off Delay Time - 140 210 Ic = 25A, Vcc = 480V
tf Fall Time - 140 210 VGE = 15V, Rs = 109
Eon Turn-On Switching Loss - 0.62 - Energy losses include "tail"
Est Turn-Off Switching Loss - 0.33 - mJ See Fig. 9,10,14
Ee Total Switching Loss - 0.95 1.4
tsc Short Circuit Withstand Time 10 - - us Vcc = 400V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
tum) Turn-On Delay Time - 30 - TJ = 150°C,
tr Rise Time - 18 - Ic = 25A, Vcc = 480V
tum) Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = lon
tf Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 1.9 - mJ See Fig. 11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - VGE = 0V
Coes Output Capacitance - 130 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 55 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by co Repetitive rating; pulse width limited by maximum
max. junction temperature. ( See fig. 13b )
Vcc = 80%(VCES)1 VGE = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
junction temperature.
G) Pulse width f 80ps; duty factor f 0.1%.
6) Pulse width 5.0ps, single shot.
