Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IRFW820TM |
SEC |
N/a |
48800 |
|
|
IRFW820TM |
SAMSUNG |
N/a |
6400 |
|
|
IRFW830B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AIRFW830B / IRFI830BNovember 2001IRFW830B / IRFI830B500V N-Channel MOSFET
IRFW840B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
IRFW840BTM ,500V N-Channel B-FET / Substitute of IRFW840AFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
ISL9N305ASK8T ,N-Channel Logic Level PWM Optimized UltraFET ?Trench Power MOSFET
ISL9N306AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETs
ISL9N308AD3 ,N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhmApplications• DC/DC convertersC (Typ) = 2600pFISSDDGGI-PAKSD-PAK (TO-251AA) STO-252(TO-252)G DSMOS ..