| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IRFW820ATM |
SAMSUNG |
N/a |
43200 |
 |
|
IRFW820B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFW820BTM ,500V N-Channel B-FET / Substitute of IRFW820AFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFW830B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AIRFW830B / IRFI830BNovember 2001IRFW830B / IRFI830B500V N-Channel MOSFET
ISL9N303AP3 ,N-Channel Logic Level UltraFETR Trench MOSFETs 30V, 75A, 3.2mOhm
ISL9N303AP3 ,N-Channel Logic Level UltraFETR Trench MOSFETs 30V, 75A, 3.2mOhm
ISL9N305ASK8T ,N-Channel Logic Level PWM Optimized UltraFET ?Trench Power MOSFET
