IRFR3410 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3410 IRFU3410HEXFET Power MOSFET
IRFR3411 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3411TR ,Leaded 100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3412 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
IRFR3412PBF , SMPS MOSFET
IRFR3412TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
ISL83385EIB ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of each• Any System Requiring RS-232 Communication Portsdevice comprising the 3V RS-232 fa ..
ISL83386EIV ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250kbps/ RS-232 Transmitters/Receivers with Separate Logic Supplyapplications are PDAs, Palmtops, and cell phones where the Meets EIA/TIA-232 and V.28/V .24 Speci ..
ISL83386EIV-T ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250kbps/ RS-232 Transmitters/Receivers with Separate Logic SupplyFeatures1 Microamp, 250kbps, RS-232 V Pin for Compatibility with Mixed Voltage SystemsLTransmitter ..
ISL83387EIV ,+/-15kV ESD Protected/+3#V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transceivers with Enhanced Automatic Powerdown and a Separate Logic Supplyapplications are PDAs, Palmtops, 0.1μF Capacitorsand notebook and laptop computers where the low op ..
ISL83387EIVZ-T , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown and a Separate Logic Supply
ISL83387EIVZ-T , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown and a Separate Logic Supply
IRFR3410-IRFU3410
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
PD - 94505A
TOR Rectifier IRFR3410
- lRFU3410
HEXFET@ Power MOSFET
A Ii ti n
pp. ca tt s Voss RDS(on) max ID
0 High frequency DC-DC converters ©
100V 39mQ 31 A
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses @ git
0 Fully Characterized Capacitance Including Ri' l \‘ft\.,
Effective Coss to Simplify Design, (See l A N, T
App. Note AN1001)
q Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR3410 IRFU3410
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 100 V
Vss Gate-to-Source Voltage t 20
ID @ To = 25°C Continuous Drain Current, VGS © 10V 31©
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 22 A
IDM Pulsed Drain Current© 125
Po @Tc = 25°C Maximum Power Dissipation 110 W
PD @TA = 25°C Maximum Power Dissipation 3.0
Linear Derating Factor 0.71 W°C
dv/dt Peak Diode Recovery dv/dt © 15 V/ns
TJ Operating Junction and -55 to + 175 °C
Tsre Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Fuuc Junction-to-Case - 1 .4
RNA Junction-to-Ambient (PCB mount)* .--- 4O °C/W
ReJA Junction-to-Ambient - 1 10
Notes (O through © are on page 10
1
2/27/06
IRFR/U3410 International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
Rosmn) Static Drain-to-Source On-Resistance - 34 39 m9 Vas = 10V, ID = 18A 6)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vss = 0V
._- - 250 Vos = 80V, l/es = 0V, Tu = 150°C
IG Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
SS Gate-to-Source Reverse Leakage - - -200 Vas = -20V
Dynamic tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 33 - - S Vos = 25V, ID = 18A
% Total Gate Charge - 37 56 ID = 18A
Qgs Gate-to-Source Charge - 10 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 11 - Vss = 10V, C9
tdwn) Turn-On Delay Time - 12 - VDD = 50V
t, Rise Time - 27 - ns ID = 18A
td(off) Turn-Off Delay Time - 40 - Ra = 9.19
tt Fall Time - 13 - Vas = 10V ©
Ciss Input Capacitance - 1690 - Vas = 0V
Coss Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 26 - pF f = 1.0MHz
Coss Output Capacitance - 1640 - Vss = 0V, l/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 130 - Vas = 0V, I/rss = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 250 - Vas = 0V, VDS = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche CurrentCD - 18 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 31© A showing the
ISM Pulsed Source Current integral reverse 5
(Body Diode) OD - - 125 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 18A, Vai; = 0V (D
trr Reverse Recovery Time - 84 - ns Tu = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 260 - nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
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