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IRFR210IRN/a40000avai200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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IRFR210-IRFR210TR-IRFR210TRL-IRFU210-IRFU210PBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.526C
IRFlR210
(llRFU210
VDSS =., 200V
Interiors/tit!,',)
EOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
It Repetitive Avalanche Rated D
0 Surface Mount (IRFR210)
0 Straight Lead (IRFU210)
o Available in Tape & Reel
0 Fast Switching
0 Ease of Paralleling
RDS(on) = 1.59
S ID=26A
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
rags-ii-af",''",;','',')
D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, Vss © 10 V 2.6
ID @ Tc = 100°C Continuous Drain Current, Veg © 10 V 1.7 A
IDM Pulsed Drain Current C) 10
PD © Tc = 25°C Power Dissipation 25 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W /° C
Linear Derating Factor (PCB Mount)" 0.020
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy co 130 ml
IAR Avalanche Current C) 2.7 A
EAR Repetitive Avalanche Energy CO 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
i Tc, Tsm Junction and Storage Temperature Range -55 to +150 00
_ Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
i' Parameter Min. Typ. Max. Units
j Rac Junction-to-Case - - 5.0
3 Ram Junction-to-Ambient (PCB mount)" - --.- 50 "C/W
l Rm Junction-to-Ambient - - 110
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR210, lRFU210
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Ves=OV, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. C3totsfficient - 0.30 - VPC Reference to 25°C, Io: 1mA
R0503") Static Drain-to-Source On-Flesistance - - 1.5 n Ves=10V, lrr--1.6A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250WA
gis Forward Transconductance 0.80 - - S Vos=50V, ID=1.6A ©
loss Drain-to-Source Leakage Current : I 22550 WA xijggx: [tCl TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 8.2 |D=3.3A
Qgs Gate-to-Source Charge - - 1.8 no VDs=160V
di Gate-to-Drain ("Miller") Charge - - 4.5 VGs=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.2 - VDD=100V
tr Rise Time - 17 - ns ID=3.3A
tam) Turn-Off Delay Time - 14 - Re=24Q
tr Fall Time - 8.9 -...... Rp=309 See Figure 10 ©
Ln Internal Drain Inductance .....-. 4.5 - 2(rlJ.lti1nd.; D
nH from package 6Q:
Ls Internal Source Inductance - 7.5 - Ind center 6f E3
die contact 5
Ciss Input Capacitance - 140 - VGS=0V
Coss Output Capacitance - 53 - pF VDs=25V
Crss Reverse Transfer Capacitance -..ev 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls _ Continuous Source Current - - 2 6 MOSFET symbol D
(Body Diode) . A showing the [ct:
ISM Pulsed Source Current - - 1O integral reverse G (IL]
l (Body Diode) (O p-n junction diode. s
v30 :' Diode Forward Voltage - - 2.0 v TJ=25°C, ls=2.6A. Vas=0V C4)
trr , Reverse Recovery Time - 150 310 ns TJ=25°C, |F=3.3A
Orr j Reverse Recovery Charge - 0.60 1.4 pc di/dt=100A/us ©
ton . Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) Voo=50V, starting TJ=25°C, L=28mH
Re=259, lAs=2.6A (See Figure 12)
© Isos2.6A, di/dts70A/ps, VDDSV(BR)DSS.
TJS1 50°C
G) Pulse width f 300 us; duty cycle 52%.
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