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IRFB4310PBFIRN/a12000avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFSL4310PBFIRN/a444avai100V Single N-Channel HEXFET Power MOSFET in a TO-262 package


IRFB4310PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB4310PbFIRFS4310PbFIRFSL4310PbF
IRFB4310Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.4.8mDS(on)Uninte ..
IRFB4310ZGPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.4.8m

IRFB4310PBF-IRFSL4310PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply D
0 High Speed Power Switching Voss 100V
0 Hard Switched and High Frequency Circuits Rosmm typ. 5.6mf2
G max. 7.0mf2
Benefits s Ir, 130A
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
q Fully Characterized Capacitance and Avalanche ,. 'iii)
SOA h, F" .diiit 's'siit'is"i.'
Enhanced body diode dV/dt and dl/dt Capability \{r’ N-, "Ri')"ie"t, q 's-., Y, "s.,
Lead-Free N .is l, bs " 1 ios
G G , G
TO-220AB D2Pak TO-262
IRFB4310PbF IRFS4310PbF IRFSL4310PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 1300D A
lo @ Tc = 100°C Continuous Drain Current, l/ss @ 10V 92CO
IDM Pulsed Drain Current © 550
Pr, @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage i 20 V
dV/dt Peak Diode Recovery © 14 V/ns
To Operating Junction and -55 to + 175 "C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1 .1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 980 mJ
IAR Avalanche Current co See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rovc Junction-to-Case © - 0.50
Rscs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
RgJA Junction-to-Ambient, TO-220 © - 62
ReJA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
01/31/06

IRF/B/S/SL4310PbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AVRDSW) Static Drain-to-Source On-Resistance - 5.6 7.0 mn I/ss = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 PA VDs = 100V, VGS = 0V
- - 250 Vos = 100V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Rs Gate Input Resistance - 1.4 - Q f= 1MHz, open drain
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S VDS = 50V, ID = 75A
Qg Total Gate Charge - 170 250 nC ID = 75A
Qgs Gate-to-Source Charge - 46 - VDS = 80V
di Gate-to-Drain ("Miller") Charge - 62 - I/ss = 10V (S)
tum) Turn-On Delay Time - 26 - ns VDD = 65V
t, Rise Time - 110 - ID = 75A
tdist) Turn-Off Delay Time - 68 - RG = 2.69
t, Fall Time - 78 - VGS = 10V co
Ciss Input Capacitance - 7670 - pF VGS = 0V
Coss Output Capacitance - 540 - Vos = 50V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related)C - 650 - Vss = 0v, Vos = OV to 80V 0, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 720.1 - Ves = 0V, VDs = 0V to 80V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1300D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 550 integral reverse G
(Body Diode) ©C7) p-n junction diode. s
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, VGS = 0V s
trr Reverse Recovery Time - 45 68 ns T J = 25°C VR = 85V,
- 55 83 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 82 120 nC T J = 25°C di/dt = 100A/ps ©
- 120 180 TJ=125°C
Ima, Reverse Recovery Current - 3.3 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A as Coss while V93 is rising from 0 to 80% Voss-
© Repetitive rating; pulse width limited by max. junction © Coss eff. (ER) is a mted capacitance that gives the same energy as
temperature. Coss while Vros is rising from 0 to 80% VDSS-
© Limited by TJmax, starting Tu = 25°C, L = 0.35mH When mounted on I" square PCB (FR-4 or G-1O Material). For recommended
Rs = 25Q, IAS = 75A, VGS =10V. Part not recommended for use footprint and soldering techniques refer to application note #AN-994.
above this value. G) Ro is measured at To approximately 90°C.
(9 Iso I 75A, di/dt s 550A/ps, VDDS V(BRmss, T J: 175°C.
© Pulse width S 400ps; duty cycle S 2%.
2

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