IRFS3207 ,V(dss): 75V; 3.6-4.5 mOhm; 180A; HEXFET power MOSFET. For high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuitsApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
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IRFS3207
V(dss): 75V; 3.6-4.5 mOhm; 180A; HEXFET power MOSFET. For high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
o Uninterruptible Power Supply
0 High Speed Power Switching
0 Hard Switched and High Frequency Circuits
Benefits
0 Worldwide Best Roswn) in TO-220
o Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
o Fully Characterized Capacitance and Avalanche
PD - 96893C
IRFB3207
IRFS3207
IRFSL3207
HEXFET® Power MOSFET
RDS(on) typ.
3.6mf2
4dimf2
SOA C Px (iii))
. Enhanced body diode dV/dt and dI/dt Capability \‘fé \__ tfjiir, 'iiRii'if"iir.,
\ q l I 's v
G D s G D s is D s
TO-220AB D2Pak TO-262
IRFB3207 IRFS3207 |RFSL3207
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V 1800D A
lr, @ TC = 100°C Continuous Drain Current, I/ss @ 10V 130(D
IDM Pulsed Drain Current Q) 720
PD @Tc = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage k 20 V
dV/dt Peak Diode Recovery GD 5.8 V/ns
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb.in (1.1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy © 910 mJ
|AR Avalanche Current co See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RGJC Junction-to-Case © - 0.45
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °CNV
RGJA Junction-to-Ambient, TO-220 © - 62
ReJA Junction-to-Ambient (PCB Mount) , DZPak O© - 40
1
03/06/06
IRF/B/S/SL3207 International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.069 - VI°C Reference to 25°C, ID = 1mA00
RDs(on) Static Drain-to-Source On-Resistance - 3.6 4.5 mn I/ss = 10V, ID = 75A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, N/ss = 0V
- - 250 Vos = 75V, VGs = 0V, T, = 125°C
lsss Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Rs Gate Input Resistance - 1.2 - Q f= 1MHz, open drain
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 180 260 nC ID = 75A
Qgs Gate-to-Source Charge - 48 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 68 - I/ss = 10V Ci)
td(on) Turn-On Delay Time - 29 - ns VDD = 48V
t, Rise Time - 120 - ID = 75A
tum) Turn-Off Delay Time - 68 - RG = 2.69
t, Fall Time - 74 - I/ss = 10V Ci)
Ciss Input Capacitance - 7600 - pF VGS = 0V
Coss Output Capacitance - 710 - Vos = 50V
Crss Reverse Transfer Capacitance - 390 - f = 1.0MHz
Cogs eff. (ER) Effective Output Capacitance (Energy Related) - 920 - l/ss = 0v, Vos = 0v to 60V 0, See Fig.11
Cass eff. (TR) Effective Output Capacitance (Time Related)© - 1010 - Vss = 0v, vDS = OV to 60V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 180CO A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 720 integral reverse G
(Body Diode) ©© p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, VGS = 0V s
trr Reverse Recovery Time - 42 63 ns T J = 25°C VR = 64V,
- 49 74 To = 125°C IF = 75A
2, Reverse Recovery Charge - 65 98 nC TJ = 25°C di/dt = 100Alps ©
- 92 140 T J = 125°C
lRRM Reverse Recovery Current - 2.6 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction co Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A as Coss while Vros is rising from 0 to 80% Voss-
© Repetitive rating; pulse width limited by max. junction C) C055 eff. (ER) is a masd capacitance that gives the same energy as
temperature. Cosswhile Vos is rising from o to 80% Voss.
© Limited by TJmax, starting TJ = 25°C, L = 0.33mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
Rs = 259, IAS = 75A, l/ss =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. © Ro is measured at Tu approximately 90°C
© iSD s: 75A, di/dt s 500A/ps, vDD s V(BRmss, T J s: 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
2
