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IRFS11N50AIRN/a695avai500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRFS11N50ATRLIRN/a200avai500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRFS11N50A-IRFS11N50ATRL
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD- 93797
International
. . SMPS MOSFET |RFS11N50A
TOR Rectifier
HEXFET® Power MOSFET
Applications
0 Switch Mode Power Supply ( SMPS ) Voss Rds(on) max ID
0 Uninterruptable Power Supply 500V 0.529 11A
0 High speed power switching
Benefits
0 Low Gate Charge Qg results in Simple
Drive Requirement
. Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
. Fully Characterized Capacitance and
Avalanche Voltage and Current
o Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS © 10V© 11
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V© 7.0 A
IDM Pulsed Drain Current coco 44
Po @Tc = 25''C Power Dissipation 170 W
Linear Derating Factor 1.3 Wl°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt ©© 6.9 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
o Two Transistor Forward
q Half & Full Bridge
a Power Factor Correction Boost
Notes (D through © are on page 8
1
9/13/99
IRFS11N5OA
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250PA
AV(BR,DSSIATJ Breakdown Voltage Temp. Coemcient - 0.060 - Vl°C Reference to 25°C, ID = 1mA©
Roam Static Drain-to-Source On-Resistance - 0.52 Q VGS = 10V, ID = 6.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- Ji, pA x: ; 288$ V2: , tj, To = 125''C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
Dynamic © Tu = 25°C (unless otherwise s oecified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 6.1 - - S I/rss = 50V, ID = 6.6A©
% Total Gate Charge - - 52 ID = 11A
095 Gate-to-Source Charge - - 13 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 18 VGS = 10V, See Fig. 6 and 13 ©©
Eon) Turn-On Delay Time - 14 - VDD = 250V
t, Rise Time - 35 - ns ID = 11A
td(ott) Turn-Off Delay Time - 32 - Rs = 9.19
tf Fall Time - 28 - RD = 22Q,See Fig. 10 ©©
Ciss Input Capacitance - 1423 - VGS = 0V
Coss Output Capacitance - 208 - Vos = 25V
Crss Reverse Transfer Capacitance - 8.1 - pF f = 1.0MHz, See Fig. 5©
COSS Output Capacitance - 2000 - Veg = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 55 - Veg = 0V, VDS = 400V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 97 - VGs = 0V, VDs = 0V to 400V ©©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 275 mJ
IAR Avalanche Current© - 11 A
EAR Repetitive Avalanche Energy© - 17 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 11 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 44 p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, Is = 11A, VGS = 0V GD
trr Reverse Recovery Time - 510 770 ns To = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 3.4 5.1 pC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)

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